© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/02/17
GEN2 SiC Schottky Diode
LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK)
RoHS
LSIC2SD120C10
Features
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• 175 °C maximum
operating junction
temperature
• Excellent surge capability
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
Maximum Ratings
Description
This series of silicon carbide (SiC) Schottky diodes has
negligible reverse recovery current, high surge capability,
and a maximum operating junction temperature of 175 °C.
These diodes series are ideal for applications where im-
provements in efficiency, reliability, and thermal manage-
ment are desired.
Circuit Diagram TO-252-2L (DPAK)
2
1
Pin 1 Pin 2
Case
Characteristics Symbol Conditions Value Unit
Repetitive Peak Reverse Voltage VRRM -1200 V
DC Blocking Voltage VRTj = 25 °C 1200 V
Continuous Forward Current IF
TC = 25 °C 33
A
TC = 135 °C 16
TC = 156 °C 10
Non-Repetitive Forward Surge Current IFSM TC = 25 °C, TP = 10 ms, Half sine pulse 80 A
Power Dissipation PTot
TC = 25 °C 176 W
TC = 110 °C 76
Operating Junction Temperature TJ--55 to 175 °C
Storage Temperature TSTG --55 to 150 °C
Soldering Temperature Tsold -260 °C
Applications
• Boost diodes in PFC or
DC/DC stages
• Switch-mode power
supplies
• Uninterruptible power
supplies
• Solar inverters
• Industrial motor drives
• EV charging stations
Pb
• Littelfuse “RoHS” logo =
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
• Littelfuse “PB-free” logo =
PB--free lead plating
Environmental
RoHS
Pb
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/02/17
GEN2 SiC Schottky Diode
LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK)
Characteristics Symbol Conditions
Value
Unit
Min. Typ. Max.
Forward Voltage VF
IF = 10 A, TJ = 25 °C -1. 5 1. 8 V
IF = 10 A, TJ = 175 °C - 2.2
Reverse Current IR
VR = 1200 V , TJ = 25 °C - <1 100 μA
VR = 1200 V , TJ = 175 °C -10
Total Capacitance C
VR = 1 V, f =1 MHz - 582
pF
VR = 400 V, f = 1 MHz - 53
VR = 800 V, f = 1 MHz - 40
Total Capacitive Charge QC VR = 800 V, - 57 nC
Electrical Characteristics
Footnote: TJ = +25 °C unless otherwise specified
Thermal Characteristics
Characteristics Symbol Conditions
Value
Unit
Min. Typ. Max.
Thermal Resistance RθJC -- 0.85 °C/W
Q
c
=
V
R
C(V)dV
∫
0
Figure 2: Typical Reverse CharacteristicsFigure 1: Typical Foward Characteristics
0
2
4
6
8
10
12
14
16
18
20
-
0.50.5 1.52.5 3.54.5
Forward Voltage (V)
Forward Current (A)
T
J
= 25
°C
T
J
= 125
°C
T
J
= 150
°C
°C
T
J
= 175
Reverse Current, I
R
(A)
1E -8
1E -7
1E -6
1E -5
1E
-4
0200 400 600 80010001200
Reverse Voltage, V
R
(V)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/02/17
GEN2 SiC Schottky Diode
LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK)
Figure 5: Capacitance vs. Reverse Voltage Figure 6: Capacitive Charge vs. Reverse Voltage
Figure 4: Current Derating
Figure 3: Power Derating
0.00
20.00
40.00
60.00
80.00
100.00
120.00
140.00
160.00
180.00
200.00
25 50 75 100125 150 175
Case Temperature (°C )
Power (W)
0
10
20
30
40
50
60
70
80
90
100
110
120
25 50 75 100125 150 175
10 % Duty
30 % Duty
50 % Duty
70 % Duty
DC
Case Temperature (°C )
Forward Current (A)
0
100
200
300
400
500
600
110100 1000
Capacitance (pF)
Voltage (V)
1000
0
10
20
30
40
50
60
70
0200 400 600 800 1000
Capacive Charge (nC)
Voltage (V)
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/02/17
GEN2 SiC Schottky Diode
LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK)
Packing Options
Part Number Marking Packing Mode M.O.Q
LSIC2SD120C10 SIC2SD120C10 Tape and Reel 2500
Part Numbering and Marking System
SIC2SD120C10
YYWWD
L
F
ZZZZZZ-ZZ
D = Special code (fixed)
SIC = SiC Diode
2 = Gen2
SD = Schottky Diode
C = TO-252-2L (DPAK)
YY = Year
WW = Week
ZZZZZZ-ZZ = Lot Number
120 = Voltage Rating (1200 V)
10 = Current Rating ( 10 A)
Figure 7: Stored Energy vs. Reverse Voltage Figure 8: Transient Thermal Impedance
0
5
10
15
20
25
0200 400 600 800 1000
Stored Energy (uJ)
Voltage (V)
1.E- 05 1.E- 04 1.E-031.E-0
21
.E-01
1.00E03
1.00E-02
1.00E-01
1.00E+00
Normalized Transient Thermal Impedance
Pulse Width (s)
Single
0.01
0.02
0.05
0.1
0.3
0.5
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/02/17
GEN2 SiC Schottky Diode
LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK)
Dimensions TO-252-2L (DPAK)
A
A1
b 2x
b3
c
c2
D
D1
E
E1
e 2x
H
L
L2
L3
L4
P
SEE DETAIL "C"
DETAIL "C"
NOTE:
- L4- MAXIMUM PLASTIC PROTRUSION.
- L2- REFERENCE FOR FOOT LENGTH MEASUREMENT.
Recommended Solder Pattern Layout
2.04
2.28
3.07
6.25
6.80
1.50
UNIT: mm
Symbol Inches Millimeters
Min Nom Max Min Nom Max
A0.085 0.090 0.095 2.16 2.29 2.41
A1 0 0.003 0.005 0 0.08 0.13
b0.025 0.030 0.035 0.64 0.76 0.89
b3 0.195 0.200 0.215 4.95 5.08 5.46
c0.018 0.020 0.024 0.46 0.51 0.61
C2 0.018 0.032 0.035 0.46 0.81 0.89
D0.235 0.240 0.245 5.97 6.10 6.22
D1 0.205 - - 5.21 - -
E0.250 0.260 0.265 6.35 6.60 6.73
E1 0.170 - - 4.32 - -
e0.090 BSC 2.29 BSC
H0.370 0.387 0.410 9.40 9.83 10.41
L0.040 0.045 0.050 1.02 1. 14 1.27
L2 0.010 BSC 0.25 BSC
L3 0.035 - 0.050 0.89 - 1.27
L4 0 - 0.006 0 - 0.15
P0° - 8 ° 0° - 8 °
Carrier Tape & Reel Specification TO-252-2L (DPAK)
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/02/17
GEN2 SiC Schottky Diode
LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK)
Carrier Tape & Reel Specification TO-252-2L (DPAK)
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