MPSA63 / MMBTA63 / PZTA63
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCES Co llector-Emitter Vol t age 30 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 10 V
ICCollector Current - Continuous 1.2 A
TJ, Tstg Operating and Stora ge Junction Tempe rature Ra nge -55 to +150 °C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSA63 *MMBTA63 **PZTA63
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 1,000
8.0 mW
mW/°C
RθJC Thermal Res i stance, Junction to Case 83.3 °C/W
RθJA Thermal Res i stance, Junction to Ambient 200 357 125 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
PZTA63
BC
C
SOT-223
E
MPSA63
CBETO-92
MMBTA63
C
B
E
SOT-23
Mark: 2U
1997 Fairchild Semiconductor Corporation A63, Rev A
MPSA63 / MMBTA63 / PZTA63
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V
(
BR
)
CES Co llecto r-Emitter Breakdown Voltage IC = 100
µ
A, IB = 0 30 V
ICBO Collector-Cu toff Current VCB = 30 V, IE = 0 100 nA
IEBO Emitter-Cutoff Current VEB = 10 V, IC = 0 100 nA
ON CHARACTERISTICS*
hFE DC Current Gain IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V 5,000
10,000
VCE(sat)Collect or-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
VBE(on)Base-Emitter On Voltage IC = 100 mA, VCE = 5. 0 V 2.0 V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
fTCurrent Gain - Bandwi dth Product IC = 10 mA, VCE = 5.0 V,
f = 100 MHz 125 MHz
PNP Darlington Transistor
(continued)
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