DS30120 Rev. 2P-1 1 of 3 2N7002DW
2N7002DW
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·Dual N-Channel MOSFET
·Low On-Resistance
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Low Input/Output Leakage
·Ultra-Small Surface Mount Package
Maximum Ratings @ TA= 25°C unless otherwise specified
Characteristic Symbol 2N7002DW Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS £1.0MWVDGR 60 V
Gate-Source Voltage (Note 1) Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 1) Continuous
Continuous @ 100°C
Pulsed
ID
115
73
800
mA
Total Power Dissipation
Derating above TA= 25°C (Note 1) Pd200
1.60 mW
mW/°C
Thermal Resistance, Junction to Ambient RqJA 625 K/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £300ms, duty cycle £2%.
A
M
JL
FD
BC
H
K
KXX
G1S1
S2G2D1
D2
Mechanical Data
·Case: SOT-363, Molded Plastic
·Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram
·Marking: K72
·Weight: 0.006 grams (approx.)
SOT-363
Dim Min Max
A0.10 0.30
B1.15 1.35
C2.00 2.20
D0.65 Nominal
F0.30 0.40
H1.80 2.20
J¾0.10
K0.90 1.00
L0.25 0.40
M0.10 0.25
All Dimensions in mm
NEW PRODUCT
DS30120 Rev. 2P-1 2 of 3 2N7002DW
Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS 60 70 ¾VVGS = 0V, ID= 10mA
Zero Gate Voltage Drain Current @ TC= 25°C
@ TC= 125°C IDSS ¾¾
1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ¾¾±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(th) 1.0 ¾2.0 V VDS =V
GS, ID=-250mA
Static Drain-Source On-Resistance @ Tj= 25°C
@T
j= 125°C RDS (ON) ¾3.2
4.4
7.5
13.5 WVGS = 5.0V, ID= 0.05A
VGS = 10V, ID= 0.5A
On-State Drain Current ID(ON) 0.5 1.0 ¾AVGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ¾¾mS VDS =10V, ID= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾22 50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾11 25 pF
Reverse Transfer Capacitance Crss ¾2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾7.0 20 ns VDD = 30V, ID= 0.2A,
RL= 150W,V
GEN = 10V,
RGEN = 25W
Turn-Off Delay Time tD(OFF) ¾11 20 ns
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £300ms, duty cycle £2%.
NEW PRODUCT
DS30120 Rev. 2P-1 3 of 3 2N7002DW
0
0.2
0.4
0.6
0.8
1
.
0
01 2 345
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fi
g
. 1 On-Re
g
ion Characteristics
DS
V = 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
GS
5.5V
5.0V
0
1
2
3
4
5
0 0.2
R,N
O
RMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
D
V = 5.0V
GS
T = 25 C
j°
V = 10V
GS
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45 70 95 120 145
R,N
O
RMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs Junction Temperature
j°
VGS = 10V, ID= 0.5A
V = 5.0V, I
GS D = 0.05A
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
D
I= 50mA
1
2
3
4
5
6
0 2 4 6 8 1012141618
R,N
O
RMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
D
I= 500mA
NEW PRODUCT
