2005-02-14
Rev.2.1 Page 1
OptiMOS Power-Transistor Product Summary
VDS 30 V
RDS(on) 4.2 mΩ
I
D
100 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
PG-TO252-5-1
1)
Gate
pin 1
Drain
pin 3,6
Source
pin 4,5
n.c.: pin 2
Marking
PN03L04
Type Package Ordering Code
SPD100N03S2L-04 PG-TO252-5-1 Q67042-S4128
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current2)
TC=100°C
ID
100
100
A
Pulsed drain current
TC=25°C
ID puls 400
Avalanche energy, single pulse
ID=80A, VDD=25V, RGS=25Ω
EAS 325 mJ
Repetitive avalanche energy, limited by Tjmax3) E
AR
15
Reverse diode dv/dt
IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
dv/dt6kV/µs
Gate source voltage V
GS
±20 V
Power dissipation
TC=25°C
Ptot 150 W
Operating and storage temperature T
j
, T
stg
-55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
12345
6
SPD100N03S2L-04
2005-02-14
Rev. 2.1 Page 2
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
thJC
-0.7 1K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 4)
RthJA
-
-
-
-
75
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
V(BR)DSS 30 - - V
Gate threshold voltage, VGS = VDS
ID = 100 µA
VGS(th) 1.2 1.6 2
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
IDSS
-
-
0.01
10
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS -1 100 nA
Drain-source on-state resistance
VGS=4.5V, ID=50A
RDS(on) -56.3 mΩ
Drain-source on-state resistance
VGS=10V, ID=50A
RDS(on) -3.4 4.2
1pin 1 and 2 have to be connected together on the PCB as well as pin 4 and 5.
2Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 307A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
3Defined by design. Not subject to production test.
4Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
SPD100N03S2L-04
2005-02-14
Rev. 2.1 Page 3
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=100A
59 118 -S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
-2500 3320 pF
Output capacitance Coss -980 1300
Reverse transfer capacitance Crss -230 350
Turn-on delay time td(on) VDD=15V, VGS=10V,
ID=50A,
RG=2.7Ω
-12 18 ns
Rise time tr-17 26
Turn-off delay time td(off) -45 67
Fall time t
f
-24 36
Gate Charge Characteristics
Gate to source charge Qgs VDD=24V, ID=100A -7.9 10.5 nC
Gate to drain charge Qgd -23.3 35
Gate charge total QgVDD=24V, ID=100A,
VGS=0 to 10V
-67.5 89.7
Gate plateau voltage V(plateau) VDD=24V, ID=100A -3.6 -V
Reverse Diode
Inverse diode continuous
forward current ISTC=25°C - - 100 A
Inv. diode direct current, pulsed ISM - - 400
Inverse diode forward voltage VSD VGS=0V, IF=80A -0.9 1.3 V
Reverse recovery time trr VR=15V, IF=lS,
diF/dt=200A/µs
-46 58 ns
Reverse recovery charge Qrr -56 69 nC
SPD100N03S2L-04
2005-02-14
Rev. 2.1 Page 4
1 Power dissipation
Ptot = f (TC)
parameter: VGS≥ 4 V
0 20 40 60 80 100 120 140 160°C 190
TC
0
20
40
60
80
100
120
W
160 SPD100N03S2L-04
Ptot
2 Drain current
ID = f (TC)
parameter: VGS≥ 10 V
0 20 40 60 80 100 120 140 160°C 190
TC
0
10
20
30
40
50
60
70
80
90
A
110 SPD100N03S2L-04
ID
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPD100N03S2L-04
ZthJC
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
10 -1 10 0 10 1 10 2
VVDS
0
10
1
10
2
10
3
10
A
SPD100N03S2L-04
ID
R DS(on) = V
DS / I D
1 ms
100 µs
10 µs
tp = 8.5µs
SPD100N03S2L-04
2005-02-14
Rev. 2.1 Page 5
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
00.5 11.5 22.5 33.5 4V5
VDS
0
20
40
60
80
100
120
140
160
180
200
A
240 SPD100N03S2L-04
ID
VGS [V]
a
a2.5
b
b3.0
c
c3.5
d
d4.0
e
e4.5
f
f5.0
g
g5.5
h
h6.0
i
Ptot = 150W
i10.0
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0 20 40 60 80 100 120 140 160 A200
ID
0
1
2
3
4
5
6
7
8
9
10
11
12
Ω
14 SPD100N03S2L-04
RDS(on)
VGS [V] =
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
5.5
h
h
6.0
i
i
10.0
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 20 µs
00.5 11.5 22.5 33.5 V 4.5
VGS
0
20
40
60
80
100
120
140
A
180
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
0 20 40 60 80 100 120 A160
ID
0
10
20
30
40
50
60
70
80
90
100
110
S
130
gfs
SPD100N03S2L-04
2005-02-14
Rev. 2.1 Page 6
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 50 A, VGS = 10 V
-60 -20 20 60 100 140 °C 200
Tj
0
1
2
3
4
5
6
7
8
9
Ω
11 SPD100N03S2L-04
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60 -20 20 60 100 °C 180
Tj
0.35
0.55
0.75
0.95
1.15
1.35
1.55
1.75
1.95
V
2.35
VGS(th)
ID=110µA
ID=6.4mA
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
0 5 10 15 20 V30
VDS
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
00.4 0.8 1.2 1.6 22.4 V3
VSD
0
10
1
10
2
10
3
10
A
SPD100N03S2L-04
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 175 °C typ
Tj = 175 °C (98%)
SPD100N03S2L-04
2005-02-14
Rev. 2.1 Page 7
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 80 A, VDD = 25 V, RGS = 25 Ω
25 45 65 85 105 125 145 °C 185
Tj
0
50
100
150
200
250
mJ
350
EAS
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 100 A pulsed
0 20 40 60 80 nC 110
QGate
0
2
4
6
8
10
12
V
16 SPD100N03S2L-04
VGS
0,8 VDS max
DS max
V0,2
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
-60 -20 20 60 100 140 °C 200
Tj
27
28
29
30
31
32
33
34
V
36 SPD100N03S2L-04
V(BR)DSS
SPD100N03S2L-04
2005-02-14
Rev. 2.1 Page 8
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
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cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPD100N03S2L-04, for simplicity the device is referred to by the term
SPD100N03S2L-04 throughout this documentation.
SPD100N03S2L-04
