VCES = 1200V
VCE(on) typ. = 3.17V
@VGE = 15V, IC = 5.0A
IRG4BH20K-S
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD -93960
E
C
G
n-channel
Features
Benefits
• High short circuit rating optimized for motor control,
tsc =10µs @ VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
• Industry standard D2Pak package
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
www.irf.com 1
8/17/00
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 2.1
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– 40
Wt Weight 6 (0.21) ––– g (oz)
Thermal Resistance
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 11
IC @ TC = 100°C Continuous Collector Current 5.0
ICM Pulsed Collector Current 22 A
ILM Clamped Inductive Load Current 22
tsc Short Circuit Withstand Time 10 µ s
VGE Gate-to-Emitter Voltage ±20 V
EARV Reverse Voltage Avalanche Energy 130 mJ
PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
TJOperating Junction and -55 to +150
TSTG Storage Temperature Range °C
Absolute Maximum Ratings
W
D2Pak
IRG4BH20K-S
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) — 28 43 IC = 5.0A
Qge Gate - Emitter Charge (turn-on) — 4.4 6.6 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) — 12 18 VGE = 15V
td(on) Turn-On Delay Time — 23 —
trRise Time — 26 — TJ = 25°C
td(off) Turn-Off Delay Time — 93 140 IC =5.0A, VCC = 960V
tfFall Time — 270 400 VGE = 15V, RG = 50Ω
Eon Turn-On Switching Loss — 0.45 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.44 — mJ See Fig. 9,10,14
Ets Total Switching Loss — 0.89 1.2
tsc Short Circuit Withstand Time 10 — — µ s VCC = 720V, TJ = 125°C
VGE = 15V, RG = 50Ω
td(on) Turn-On Delay Time — 23 — TJ = 150°C,
trRise Time — 28 — IC = 5.0A, VCC = 960V
td(off) Turn-Off Delay Time — 10 0 — VGE = 15V, RG = 50Ω
tfFall Time — 620 — Energy losses include "tail"
Ets Total Switching Loss — 1.7 — mJ See Fig. 10,11,14
LEInternal Emitter Inductance — 7.5 — n H Between lead and center of die contact
Cies Input Capacitance — 435 — VGE = 0V
Coes Output Capacitance — 44 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 8.3 — ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage — 1.13 — V/°C VGE = 0V, IC = 2.5mA
— 3.17 4.3 IC = 5.0A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage — 4.04 — IC = 11 A See Fig.2, 5
— 2.84 — I C = 5.0A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.5 — 6.5 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage — -1 0 — mV/°C VCE = VGE, IC = 1mA
gfe Forward Transconductance 2.3 3.5 — S VCE = 100 V, IC = 5.0A
— — 250 VGE = 0V, VCE = 1200V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000 VGE = 0V, VCE = 1200V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =50Ω,
(See fig. 13a)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
IRG4BH20K-S
www.irf.com 3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
Load Current ( A )
0.1
1
10
100
1 10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20µs PULSE WIDTH
GE
T = 150 C
J°
T = 25 C
J°
0
4
8
12
16
0.1 1 10 100
f, Frequency (kHz)
A
60% of rated
vol tage
Ideal diodes
Square wave:
F or both:
Duty cycle : 50%
T = 125˚ C
T = 90 ˚C
Gate drive as specified
sink
J
Triangu lar wave:
Clamp voltage:
80% of rated
Power Di ssipation = 15W
1
10
100
6 8 10 12 14
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5µs PULSE WIDTH
CC
T = 25 C
J°
T = 150 C
J°
IRG4BH20K-S
4www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D =t / t
2. Peak T=P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectan
g
ular Pulse Duration
(
sec
)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
3
6
9
12
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C°
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
2.0
3.0
4.0
5.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A10
C
I = A5
C
I = A2.5
C
TJ , Junction Temperature ( °C )
IRG4BH20K-S
www.irf.com 5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
1 10 100
0
200
400
600
800
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
Cies
Coes
Cres
010 20 30 40 50
0.70
0.75
0.80
0.85
0.90
0.95
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 960V
V = 15V
T = 25 C
I = 11A
CC
GE
J
C
°
0 5 10 15 20 25 30
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 11A
CC
C
RG , Gate Resistance ( Ω )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J°
R = 50Ohm
V = 15V
V = 960V
G
GE
CC
I = A
10
C
I = A
5
C
I = A
2.5
C
Ω
TJ , Junction Temperature ( °C )
IRG4BH20K-S
6www.irf.com
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current Fig. 12 - Turn-Off SOA
1
10
100
1 10 100 1000 10000
V = 20V
T = 125 C
GE
Jo
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
0246810
0.0
1.0
2.0
3.0
4.0
5.0
I , Collector Current (A)
Total Switching Losses (mJ)
C
R = 50Ohm
T = 150 C
V = 960V
V = 15V
G
J
CC
GE
°
Ω
IRG4BH20K-S
www.irf.com 7
960V
2 X IC@25°C
D.U.T.
50V
LV *
C
* Driver same t
y
p
e as D.U.T.; Vc = 80% of Vce
(
max
)
* Note: Due to the 50V
p
ower su
p
p
l
y
,
p
ulse w idth an d in du ctor
will in c r eas e to o btain rat e d Id .
1000V
Fig. 13a - Clamped Inductive
Load Test Circuit Fig. 13b - Pulsed Collector
Current Test Circuit
480µF
960V
0 - 960V RL =
t=5µs
d(on)
tt
f
t
r
90%
t
d(off)
10%
90%
10%
5%
V
C
I
C
E
on
E
off
ts on o ff
E = (E + E )
Fig. 14b - Switching Loss
Waveforms
50V
Driver*
1000V
D.U.T.
I
C
C
V
L
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 960V
IRG4BH20K-S
8www.irf.com
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.1 03)
2.32 (.0 91)
8.89 (.350)
R EF.
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5.28 (.208)
4.78 (.188)
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15.49 (.610)
14.73 (.580)
3X 0.93 (.037)
0.69 (.027)
5.08 (.200)
3X 1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
M AX .
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIM ENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0 .2 5 ( .0 10) M B A M MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
LEAD ASSIGNM ENTS
1 - GAT E
2 - DRAIN
3 - SOUR CE
2.54 (.100)
2 X
D2Pak Package Outline
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90
(
.429
)
10.70
(
.421
)
16.10
(
.634
)
15.90
(
.626
)
1.75
(
.069
)
1.25
(
.049
)
11.60
(
.457
)
11.40
(
.449
)
15.42
(
.609
)
15.22
(
.601
)
4.72
(
.136
)
4.52
(
.178
)
24.30
(
.957
)
23.90
(
.941
)
0.3 68
(
.0145
)
0.3 42
(
.0135
)
1.60
(
.063
)
1.50
(
.059
)
13.50
(
.532
)
12.80
(
.504
)
330.00
(14.173)
MAX.
27.40
(
1.079
)
23.90
(
.941
)
60.00
(
2.362
)
MIN.
30.40
(
1.197
)
MA X.
26.40 (1.039)
24.40 (.961)
NOTES :
1. CO M F O R M S TO EIA-418.
2. CONTROLLING DIMENSION: MILLIM ETER.
3. DIM ENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDG E.
D2
Pak Tape and Reel
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 8/00
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
