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Page <1> V1.027/02/13
N-Channel Enhancement
Mode Field Effect Transistor
Features:
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
SOT-363
Applications:
• N-Channel Enhancement Mode Effect Transistor
• Switching Application
Maximum Ratings:
Ratings at 25°C unless otherwise specied.
Parameter Symbol Value Units
Drain-Source voltage VDSS 60 V
Drain-Gate voltage (RGS ≤1MΩ) VDGR 60 V
Gate -source voltage - continuous
-Non Repetitive (tp <50μs) VGSS ±20
±40 V
Maximum drain current -continuous
-Pulsed ID115
800 mA
Power dissipation PD200 mW
Thermal resistance, junction-to-ambient RθJA 625 °C/W
Junction and storage temperature TJ, Tstg -55 to +150 °C
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Page <2> V1.027/02/13
N-Channel Enhancement
Mode Field Effect Transistor
Typical Characteristics:
T
a
= 25°C unless otherwise specied
Electrical Characteristics:
Ratings at 25°C unless otherwise specied
Parameter Symbol Test conditions Min. Typ. Max. Unit
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=10μA 60 70 - V
Gate threshold voltage VGS(th) VDS=VGS, ID=250μA 1 - 2
Gate-body leakage Forward
Reverse IGSS VDS=0V, VGS=20V
VDS=0V, VGS=-20V
-
-
-
-
100
-100 nA
Zero gate voltage drain current IDSS
VDS=60V, VGS=0V - - 1μA
VDS=60V, VGS=0V, Tj=125°C - - 500
On-state drain current ID(On) VGS=10V, VDS=7.5V 0.5 1- A
Drain-source on-voltage VDS(ON) VGS=10V, ID=500mA
VGS=5V, ID=50mA
-
-
0.6
0.09
3.75
1.5 V
Forward transconductance gFS VDS=10V, ID=200mA 80 - - mS
Static drain-source on-resistance RDS(ON) VGS=5V, ID=50mA
VGS=10V, ID=500mA, Tj=125°C
-
-
3.2
4.4
7.5
13.5 Ω
On-state drain current ID(ON) VGS=10V, VDS=7.5V 0.5 1- A
Drain-source diode forward voltage VSD VGS=0V, ID=115mA - 0.88 1.5 V
Input capacitance CISS
VDS=25V, VGS=0V, f=1MHz
- 20 50
pF
Output capacitance COSS -11 25
Reverse transfer capacitance CRSS - 2 5
Turn-on delay time tD(ON) VDD = 30V, ID= 0.2A,
RL = 150Ω, VGS= 10V, RGEN= 25Ω
- 7 20 ns
Turn-off delay time tD(OFF) -11 20 ns
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Page <3> V1.027/02/13
N-Channel Enhancement
Mode Field Effect Transistor
SOT-363
Dim. Min. Max.
A 2 2.2
B1.15 1.35
C0.95 Typ.
D0.25 Typ.
E 0.25 0.4
G 0.6 0.7
H0.02 0.1
J 0.1 Typ.
K 2.2 2.4
Dimensions : Millimetres
Package Outline:
Plastic surface mounted package
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Page <4> V1.027/02/13
N-Channel Enhancement
Mode Field Effect Transistor
Part Number Table
Description Part Number
N-Channel Enhancement Mode
Field Effect Transistor 2N7002DW-TR
Soldering Footprint:
Package Information:
Device Package Shipping
2N7002DW-TR SOT-363 3,000 / Tape & Reel
Dimensions : Millimetres
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
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assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
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Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
