BY251GP thru BY255GP
Vishay General Semiconductor
Document Number: 88541
Revision: 10-Nov-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Glass Passivated Junction Plastic Rectifier
FEATURES
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current, IR less than 0.1 µA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power
supplies, inverters, converters and freewheeling
diodes for both consumer and automotive applications.
MECHANICAL DATA
Case: DO-201AD, molded epoxy over glass body
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 3.0 A
VRRM 200 V to 1300 V
IFSM 100 A
IR5.0 µA
VF1.1 V
TJ max. 175 °C
DO-201AD
Patented*
®
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly by
Patent No. 3,930,306
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BY251GP BY252GP BY253GP BY254GP BY255GP UNIT
Maximum non repetitive peak reverse voltage VRSM 220 440 660 880 1430 V
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1300 V
Maximum RMS voltage VRMS 140 280 420 560 910 V
Maximum DC blocking voltage VDC 200 400 600 800 1300 V
Maximum average forward rectified current 10 mm lead
length at TA = 55 °C IF(AV) 3.0 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 100 A
Maximum full load reverse current, full cycle average
10 mm lead length at TA = 55 °C IR(AV) 100 µA
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C