D40D Series NPN POWER TRANSISTORS COMPLEMENTARY TO THE D41D SERIES 1 AMP, 6.25 WATTS The General Electric D40D is a power transistor designed for Wen various specific and general purpose applications, such as: COLLECTOR output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0 MHz; series, shunt and switching BASE regulators; low and high frequency inverters/converters; and many others. ee CASE STYLE TO-202 Features: DIMENSIONS ARE IN INCHES AND (MILLIMETERS) e High free-air power dissipation aia 125 AEF, NPN complement to D41D PNP 375) o.t28-0.132 ; Bassas e Low collector saturation voltage (0.5V typ. @ 1.0A Ic) oasoose | | FP Y7~ e Excellent linearity nenene Fast Switching 0285-0.915 0065-0075 {7.237-8.001) |] I {1-651-1.905) i codes oer fF 0.050 en) O405-0425 | | 1.270) a 2 {90 287-10.795) - 3 0 095-0.105 | | le 0 170-0,190 (2.413-2 667) 0,095-0.105 (4316-4 626) nae (2.419-2.667) 0.019-0 026 (0660) ~ (0 483-0 680) 0.095-0.106 (2.413-2.667) (tee | team1 | TerM2 | 1eaM.3 | TAB ] (to-zoe | emer [ease | coluecToR | COLLECTOR | maximum ratings (Ta = 25C) (unless otherwise specified) RATING SYMBOL D40D1, 2 D40D4, 5 040D7, 8 UNITS Collector-Emitter Voltage VcEo 30 45 60 Volts Collector-Emitter Voltage VCES 45 60 75 Volts Emitter Base Voltage VEBO 5 5 5 Volts Collector Current Continuous Io 1 1 1 A Peak(1) tom 1.5 1.5 1.5 Base Gurrent Continuous Ig 5 5 5 A Total Power Dissipation @ Ta = 25C Pp 1.67 1.67 1.67 Watts @ To = 25C 6.25 6.25 6.25 Operating and Storage Junction rT . Z Temperature Range J.Tstg -55 to +150 55 to +150 55 to +150 c thermal characteristics Thermal Resistance, Junction to Ambient Rea 76 75 75 C/W Thermal Resistance, Junction to Case Reic 20 20 20 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds TL +260 +260 +260 C (1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%,electrical characteristics (To = 25 C) (unless otherwise specified) | CHARACTERISTIC [symBoL | MIN | TYP | MAX UNIT | off characteristics Collector-Emitter Sustaining Voltage eon aa van : , CEO ons (lg = 10mA) D40D4, 5 an 45 = _ 040D7, 8 Collector Cutoff Current (Vce = Rated VcEo) Tce = 26C IcES _ _ 0.1 (Vce =Rated Vces) To = 150C _ 1.0 pA Emitter Cutoff Current (Veg = 5V) lEBO 0.1 BA second breakdown [Second Breakdown with Base Forward Biased | FBSOA | SEE FIGURE 4 4 on characteristics DC Current Gain D40D1, 4,7 hre 50 _ 150 _ (Iq = 100mA, Voce = 2V) D40D2, 5, 8 120 360 D40D1, 4, 7 hfe 10 = _ (lo = WA Woes) D408, 8 10 = = : Collector-Emitter Saturation Voltage % (Io = 500mA, Ig = 50mA) pee 7 4,5 VoE(sat) - - 05 Volts Base-Emitter Saturation Voltage (ic = 500mA, tp = 50mA) VBE(sat) a - 1.5 Volts dynamic characteristics Collector Capacitance (Vcp = 10V, f = 1MHz) CcBo a 8 = pF Current-Gain Bandwidth Product (Ic = 20mMA, Vce = 10V) fT 200 MHz switching characteristics Resistive Load Delay Time + = = = _ _ Rise Time Io = 1A, Ipi = Ip2 = 9.1A ta + ty 25 ns Storage Time t _ 200 _ Voc = 30V, tp = 25 usec S Fall Time ce pre tt = 50 = (1) Pulse Test PW = 300ms Duty Cycle = 2%. Te + COLLECTOR CURRENT mA FIG. 1 Veg sav 64001,4,7 TYPICAL Heg VS Ic qr COLLECTOR CURRENT FIG. 2o SATURATION VOLTAGE = VOLTS #SEC PULSE 10 pSEC aSEc aSEC Xe/ky Tye 26sc Yeztsary 100 eo T@- COLLECTOR CURRENT ~ mA 40 Voes MAX! 04001,2 Veeg MAX! 04004,8 20 Yogs MAX! 04007,6 Youtsati Vy 8 40 60 MAXIMUM COLLECTOR TO EMITTER YOLTAGE - VOLTS FIG.3 TYPICAL SATURATION FIG. 4 SAFE REGION OF OPERATION VOLTAGE CHARACTERISTICS 19 1 Oo TerCOLLECTOR CURRENT ~ aA 100 TO AMBIENT TAB AMBIENT TAS JUNCTION TO TAB 3s ~ TRANSIENT THERMAL IMPEDANCE - *CAWATT 1 10 100 TIME IN SECONDS FIG.5 MAXIMUM TRANSIENT THERMAL IMPEDANCE