IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * * * * * * * 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. G S D G Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC S N-Channel MOSFET ORDERING INFORMATION Package TO-247AC IRFP240PbF SiHFP240-E3 IRFP240 SiHFP240 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS 20 Continuous Drain Current VGS at 10 V TC = 25 C TC = 100 C Pulsed Drain Currenta ID UNIT V 20 12 A IDM 80 1.2 W/C Single Pulse Avalanche Energyb EAS 510 mJ Repetitive Avalanche Currenta IAR 20 A Repetitive Avalanche Energya EAR 15 mJ Linear Derating Factor Maximum Power Dissipation TC = 25 C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 150 W dV/dt 5.0 V/ns TJ, Tstg - 55 to + 150 300d C 10 lbf * in 1.1 N*m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 1.9 mH, Rg = 25 , IAS = 20 A (see fig. 12). c. ISD 18 A, dI/dt 150 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91210 S11-0445-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP240, SiHFP240 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.83 UNIT C/W SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 A 200 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.29 - V/C VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = 20 V - - 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 VDS = 160 V, VGS = 0 V, TJ = 125 C - - 250 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 12 Ab VGS = 10 V VDS = 50 V, ID = 12 Ab A - - 0.18 6.9 - - S - 1300 - - 400 - - 130 - - - 70 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 18 A, VDS = 160 V, see fig. 6 and 13b VDD = 100 V, ID = 18 A, Rg = 9.1 , RD = 5.4, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF - - 13 - - 39 - 14 - - 51 - - 45 - - 36 - - 5.0 - - 13 - - - 20 - - 80 - - 2.0 - 300 610 ns - 3.4 7.1 C nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 C, IS = 20 A, VGS = 0 Vb TJ = 25 C, IF = 18 A, dI/dt = 100 A/sb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91210 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP240, SiHFP240 Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 150 C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91210 S11-0445-Rev. B, 21-Mar-11 www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP240, SiHFP240 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91210 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP240, SiHFP240 Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width 1 s Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91210 S11-0445-Rev. B, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP240, SiHFP240 Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - IAS V DD VDS 10 V 0.01 tp Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k QG 10 V 12 V 0.2 F 0.3 F QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91210 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP240, SiHFP240 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - Rg * * * * + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91210. Document Number: 91210 S11-0445-Rev. B, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) VERSION 1: FACILITY CODE = 9 MILLIMETERS DIM. MIN. MAX. A 4.83 A1 2.29 MILLIMETERS NOTES DIM. MIN. MAX. NOTES 5.21 D1 16.25 16.85 5 2.55 D2 0.56 0.76 A2 1.50 2.49 E 15.50 15.87 b 1.12 1.33 E1 13.46 14.16 5 b1 1.12 1.28 E2 4.52 5.49 3 b2 1.91 2.39 b3 1.91 2.34 b4 2.87 3.22 b5 2.87 3.18 c 0.55 0.69 c1 0.55 0.65 D 20.40 20.70 4 6 e L 14.90 15.40 6, 8 L1 3.96 4.16 6 OP 3.56 3.65 7 6 4 5.44 BSC O P1 7.19 ref. Q 5.31 5.69 S 5.54 5.74 Notes (1) Package reference: JEDEC(R) TO247, variation AC (2) All dimensions are in mm (3) Slot required, notch may be rounded (4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body (5) Thermal pad contour optional with dimensions D1 and E1 (6) Lead finish uncontrolled in L1 (7) O P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition Document Number: 91360 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 08-Jan-2020 Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = Y A A 4 E B 3 R/2 E/2 7 OP O k M DBM A2 S (Datum B) OP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L See view B 2 x b2 3xb 0.10 M C A M 4 E1 A 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 MILLIMETERS NOTES DIM. MIN. MAX. D2 0.51 1.30 15.87 A1 2.21 2.59 E 15.29 A2 1.17 2.49 E1 13.72 b 0.99 1.40 e 5.46 BSC b1 0.99 1.35 Ok b2 1.53 2.39 L 14.20 16.25 b3 1.65 2.37 L1 3.71 4.29 b4 2.42 3.43 OP 3.51 3.66 b5 2.59 3.38 O P1 - 7.39 c 0.38 0.86 Q 5.31 5.69 4.52 c1 0.38 0.76 R D 19.71 20.82 S D1 13.08 - NOTES 0.254 5.49 5.51 BSC ECN: E19-0614-Rev. E, 08-Jan-2020 DWG: 5971 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) O P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Document Number: 91360 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 08-Jan-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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