CREAT BY ART
- UL Recognized File # E-326243
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
V
RRM
35 45 50 60 90 100 V
V
RMS
24 31 35 42 63 70 V
V
DC
35 45 50 60 90 100 V
I
F(AV)
A
I
RRM
A
dV/dt V/us
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number：DS_D1309035 Version:G13
MBR6035PT thru MBR60100PT
Dual Common Cathode Schottk
y
Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MBR
6045
PT
MBR
6050
PT
MBR
6060
PT
MBR
6090
PT
TO-247AD(TO-3P)
MECHANICAL DATA
Case：TO-247AD(TO-3P)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal：Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity：As marked
MBR
60100
PT
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Mounting torque：10 in-lbs maximum
Weight：6.1 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL
MBR
6035
PT
Maximum DC blocking voltage
Maximum average forward rectified current 60
Peak repetitive forward current
(Rated V
R
, Square wave, 20KHz) I
FRM
60 A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
420 A
Peak repetitive reverse surge Current (Note 1)
V
0.70 0.75 0.84
0.60 0.65 -
0.82 0.93 0.98
Maximum instantaneous forward voltage (Note 2)
IF=30A, T
J
=25℃
IF=30A, T
J
=125℃
IF=60A, T
J
=25℃
V
F
- 55 to + 150
mA
30 20 10
Voltage rate of change,(Rated V
R
)10,000
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃I
R
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle
1
1
Taiwan Semiconductor
Typical thermal resistance 1.2
Operating junction temperature range - 55 to + 150
Storage temperature range
PART NO.
PART NO.
MBR6060PT
MBR6060PT
MBR6060PT
(TA=25℃ unless otherwise noted)
Document Number：DS_D1309035 Version:G13
MBR6035PT thru MBR60100PT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE PACKAGE PACKING
MBR60xxPT
(Note 1) Prefix "H" C0 Suffix "G" TO-3P 30 / Tube
Note 1: "xx" defines voltage from 35V (MBR6035PT) to 100V (MBR60100PT)
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
MBR6060PT C0 C0
MBR6060PT C0G C0 G Green compound
MBR6060PTHC0 H C0 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
0
15
30
45
60
75
0 50 100 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0
100
200
300
400
500
600
1 10 100
PEAK FORWARD SURGE CURRENT
(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3mS Single Half Sine Wave
JEDEC Method
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=125℃
TJ=25℃
MBR6035PT-MBR6045PT
MBR6050PT-MBR60100PT
TJ=75℃
0.1
1
10
100
1000
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
TJ=125℃
TJ=125℃
Pulse Width=300us
1% Duty Cycle
MBR6050PT-60100PT
MBR6035PT-6045PT
TJ=25℃
MBR6035PT-6045PT
MBR6050PT-60100PT
TJ=25℃
CREAT BY ART
Min Max Min Max
A 15.90 16.40 0.626 0.646
B 7.90 8.20 0.311 0.323
C 5.70 6.20 0.224 0.244
D 20.80 21.30 0.819 0.839
E 3.50 4.10 0.138 0.161
F 19.70 20.20 0.776 0.795
G - 4.30 - 0.169
H 2.90 3.40 0.114 0.134
I 1.93 2.18 0.076 0.086
J 2.97 3.22 0.117 0.127
K 1.12 1.22 0.044 0.048
L 5.20 5.70 0.205 0.224
M 4.90 5.16 0.193 0.203
N 2.70 3.00 0.106 0.118
O 0.51 0.76 0.020 0.030
P/N = Marking Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number：DS_D1309035 Version:G13
MARKING DIAGRAM
MBR6035PT thru MBR60100PT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit(mm) Unit(inch)
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG
f=1.0MHz
Vsig=50mVp-p
MBR6035PT-MBR6045PT
MBR6050PT-MBR6060PT
MBR6090PT-MBR60100PT
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
T-PULSE DURATION (sec)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
