RB521S-30
Taiwan Semiconductor
1 Version: C1804
200mA, 30V Low VF SMD Schottky Barrier Diode
FEATURES
● Low capacitance
● Low forward voltage drop
● Moisture sensitivity level: level 1, per J-STD-020
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Adapters
● For switching power supply
● Low stored charge
● Inverter
MECHANICAL DATA
● Case: SOD-523F
● Molding compound meets UL 94 V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
● Weight: 1.68 ± 0.5 mg
PARAMETER VALUE UNIT
IF 200 mA
VRRM 30 V
IFSM 1 A
VF at IF=200mA 0.5 V
TJ Max. 125 °C
Package SOD-523F
Configuration Single die
(TA = 25°C unless otherwise noted)
Marking code on the device C
Power dissipation PD 200 mW
Repetitive peak reverse voltage VRRM 30 V
Forward current IF 200 mA
Non-repetitive peak forward surge current @ t = 8.3ms IFSM 1 A
Junction temperature range TJ -55 to +125 °C
Storage temperature range TSTG -55 to +125 °C
Junction-to-ambient thermal resistance RӨJA 500 °C/W