(SQUARE D CO/ GENERAL q5 3918590 GENERAL SEMICONDUCTOR be ~ General . A Semiconductor De @ Industries, Inc. SQUARE T) COMPANY NPN SWITCHING POWER TRANSISTORS 95D 02119 D MW@@ 6525508 000e1195 6 D T= 33-1 ~ NPN me unique device utilizes General Semiconductor tndustries' C?R process which 200V jescribes a m: turi i i i voltage plete are oe long a a ety. surface stabilization nigh 1.0 AMP SWITCHING *MAXIMUM RATINGS (Tc = 25C unless otherwise noted) RATING SYMBOL 2N5218 UNIT Collector-Base Voltage Veo 220 Volts CollectorEmitter Voltage Veeo 200 Voits Emitter-Base Voltage Vewo 8.0 Volts Collector Current Continuous le 10 Amps Base Current Continuous ls 1.0 Amps Total Power Dissipation@Tc = 100C Po 50 Watts Junction to Case Thermal Resistance Rese 2.0 C/W Ore oaure Range re ~85 to +200 e *ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) 2N5218 SYMBOL CONDITIONS Min Max Unit Veeo lo = 10uA . 220 _ Volts Veco lo = 200mMA 200 - Volts Veso le = 104A 8.0 _ Volts Iceo Vea = 100V - 05 LA leso Ves = 8.0V _ 10 HA Ico Voce = 200V - 100 HA Icex Voce = 220V, Vea = 1.5V, Te = 150C _ 2.0 mA toex Voce = 220V, Vee =15V _ 10 HA hee Tt Vee = 5.0V, lo = 50A 15 120 hee t Voce = 5.0V, Io = 5.0A, Te = -55C 10 _ hee t Voce = 8.0V, Ic = 0.5A 75 300 hee t Voce = 5.0V, le = 10A 5.0 _ Veetean T lo = 5.0A, lp = 0.5A ~ 0.6 Volts Veetsavt lc = 10A, Ip = 2.0A _ 5.0 Volts Veetom t Voce = 5.0V, Ic = 5.0A - 1.2 Volts Vactsan T lc = 5.0A, Ip = 0.5A _ 15 Volts fr Vce = 10V, Ic = 1.0A, f = 10MHz 40 MHz Coso Vea = 10V, f = IMHz _ 200 pF SWITCHING Typ Max Unit ton Resistive Load . _ 0.6 us ton . Voc = 20V = 55 HS t _le=1.0A _ 0.6 us t ; es 100mA _ 45 us t _ 1.0 us "JEDEG registered data f Pulse conditions: Width = 300us, Duty Cycle = 2% (measured using Kelvin connections}. iconductor Industries, Inc. > SQUARE ]) COMPANY ey ea oree aN ei West Tenth Place * Tempe, Arizona 85281 - Ste ee tS ee et td - en aes aa Con) HE r ar