October 2000 alpha mi croelectronics gm bh Page 1/12
Description
The Â1610, combined with an external NMOS, is
used as a low loss driver for coils, relays or
magnets.
The integrated circuit includes a self protection of
broken wires and short circuits on the input line.
The chip overtemperature protection is adjusted
from 80 to 150 °C with an external resistor.
Chip overtemperature and undervoltage errors are
indicated on input IN.
Features
Voltage supply 8 to 45 V DC
5 V reference voltage output
12 V reference voltage output
Quiescent current 1.5 mA
Output peak current up to 100 mA
Undervoltage lockout and power-on reset
Overvoltage protection for the external NMOS
Protection against reversed battery and EMC to
-300 V
Adjustable chip overtemperature protection
Temperature range -40°C to +150°C
Package SOP 18 Â1610AT
Die Â1610AX
Applications
Driver for coils and relays
Typical Application Coil driver using Â1610
10
11
16
18
12
R
PT
R
REF
18k
30k
IN
Â
1610
IRCR
INPT GNDD
VDDC
OSC
9O5V
100n
C
O5V
3
2
17
DL
M4
V
DD
Output
VDD
OUT
OVP
C
OSC
10n
C
DDC
15
Input
14
GNDA
1
O12V
8OD
100n
Coil Driver IC
Â1610
Data Sheet
Page 2/12 alpha mi croelectronics gm bh October 2000
• Functional Block Diagram
Reference
Regulator 5V
VDD-Undervoltage
Lockout
VDD
17 16
2
3
18
12
Frequency
Analyse
OSC
VDDC
OUT
OSC
OVP
Block Diagram Â1610
D1
42V
GNDD
M4
O5V
15V
9
Frequency Divider
4:1
GNDA
14
O12V
1
15
IN
OD
8
Turn on / off
Logic
Status
O5V-Undervoltage
Lockout
250k
9V
350k
Error
Logic
Enable
Driver
3V
2,5V
Oscillator
100nF
100nF
CO5V CDDC
1,5nF
14V
Stabilization 12V
Driver
M3
M1
M2
Interference
Suppression
11
10
C
RPT RREF
INPT IRCR
30k
r
50µ
50µ
18k
O5V
Thermal
Shutdown
50µA/
25µA
50k
V
DD
October 2000 alpha mi croelectronics gm bh Page 3/12
Pin Definition
Lead Definition
Pin Symbol Designation
1 O12V Reference Voltage Output 12 V
2 OVP Overvoltage Protection Input for external N-Kanal Power MOSFET
3 OUT Output
8 OD Output Diode Temperature Sensor
9 O5V Reference Voltage Output 5 V
10 INPT Resisto r RPT for Overtemperature Protection
11 IRCR Resisto r RREF for Current Reference
12 OSC Capacitor COSC for Oscillator Frequency
14 GNDA GND-Analog
15 IN Input
16 VDDC Block Capacitor
17 VDD Supply Voltage
18 GNDD GND-Digital
General function and description
The À1610 combined with an external N-channel power MOSFET serves for the low loss control of
electrical magnetic actuators like relays or magnets and similar kinds of coils. It is especially suitable in
automotive applications.
It is designed for a power supply range from 8 to 45 V.
As protection against reverse polarity of the supply voltage the IC is supplied with an internal dumping
diode D1 in the supply voltage connection (forward voltage approx. 0.6 V).
The chip generates two internally stabilized voltages.
There are a 5 V-voltage source for the digital logic and a 12 V-voltage source for the push-pull drivers.
The chip realizes protection against undervoltage of VDD (VDD-Undervoltage Lockout), undervoltage of
O5V (O5V-Undervoltage Lockout), overvoltage of VDS of the external transistor M4 and against
overtemperature (Thermal Shutdown).
The outputs of the Undervoltages Lockout of VDD and O5V are logical AND combined.
VDD
At start up of the supply voltage the output of VDD-Undervoltage Lockout switches to "High" at about
VDD ≈ 7.6 V.
If the voltage VO5V rises to the switching threshold at 4 V, the "power on reset" of the logic will finish and
the output of the O5V-Undervoltage Lockout goes to "High".
The output of the Error Logic switches to "High" if no overtemperature is detected.
Concurrent the dynamic input will be released and triggers the Enable Driver for the push pull drivers.
The output of the Error Logic switches to "Low", if the supply voltage VDD decreases under a value of 7 V.
The Output OUT and the input IN switch to "Low" and the logic enables power on reset.
The undervoltage detection senses the voltage at VDDC. With it the integrational effect of the back-up
capacitor CDDC is to take into account.
Short-term drops of supply voltage VDD below the switching threshold of 7 V do not actuate the
undervoltage detector.
Page 4/12 alpha mi croelectronics gm bh October 2000
VDDC
At this pin a forward voltage of the dumping diode D1 reduces the supply voltage VDD.
This pin must be connected to a back-up capacitor.
It is allowed to connect the power supply directly to the pin VDDC.
In this case the protection against EMC and against reverse polarity of the supply voltage is cancelled.
The threshold value for the detecting of the undervoltage decreases by a forward voltage.
O5V
The reference regulator 5 V must wired-up to a back-up capacitor.
The output may be loaded with 5 mA maximally. If the output O5V is reloaded more than 1.5 mA
deviations are permitted data.
O12V
The 12 V-voltage source is a source follower stage M1 with RDS(on)M1 of about 60 Ω.
From VDD = 0 to 14 V the output voltage shows a linear dependence on the supply voltage.
The output may be loaded with 10 mA maximally.
Besides you must keep the dependence of load for the voltage. If the output O12V is reloaded deviations
are permitted data.
OUT
The closing resistors RDS(on) of the push-pull driver transistors M2 and M3 are about
45 Ω respectively 20 Ω. The push-pull driver transistors can drive at Ta = 25 °C reloading currents of
about 100 mA. Without load the maximal output voltage of the push-pull driver is identical with the
voltage VO12V.
The output is internal protected with a 15 V - Zener diode against external overvoltage.
The resistive load must not exceed 10 mA.
The current limititation of the external transistor M4, e.g. against short-circuit, must be external guarded.
OVP
The input OVP is internal connected by a 42 V - Zener diode and three forward diodes to the output OUT.
With that it is possible to protect the external transistors M4 in the switched off condition against excess
voltages by clamping the drain of this transistor to typically (44 V + VGSM4).
The threshold for the protection against overvoltage is reached if a current > 70 µA flows in the input OVP.
In result the internal Low side driver transistor M3 switches off. After that the current loads the gate of the
external transistor to VGSM4 and switches it on.
At use of external transistors with a higher breakdown voltage the overvoltage protection can be modified
by an external Zener diode.
The function overvoltage protection is dimensioning at inductive loads. With the driving other loads limit
the current in the Pin OVP if necessary.
IN
Input voltages > 4 V are logical high and input voltages < 2,0 V are logical Low.
If the input is open (non-connected) the internal value is recognized as logical high.
An internal RC filter with a delay time of 700 ns inhibits short disturbing pulses.
The input IN is Low active.
The internal Turn on/ off Logic separates the functions of the input:
1. Dynamic switching on
The dynamic switching on condition is derived from the oscillator frequency.
In the case the input signal (rectangle, sinus, triangle) should meet the following frequency condition the
output of the Turn on/off Logic is set to High:
Dynamic switching on condition: fIN_ON > 0.6*fOSC
The turning-on delay time is a multiple of the oscillator frequency TPOSC. It has no fixed value but it
depends on the phase position and is between 2*TPOSC and 6*TPOSC.
The dimension has to set to 6*TPOSC (worst case).
October 2000 alpha mi croelectronics gm bh Page 5/12
2. Dynamic switching off
The dynamic turning-off condition is derived from the oscillator frequency.
In the case the input signal should meet the following frequency condition the output of the Turn on/off
Logic is set to Low:
Dynamic switching off condition: fIN_OFF < 0.2* fOSC
The turning-off delay time is a multiple of the oscillator frequency TPOSC. It has no fixed value but it
depends on the phase position and is between 2*TPOSC and 6*TPOSC.
The dimension has to set to 6*TPOSC (worst case).
3. Static switching off
Following three static conditions at the input switch off the output OUT:
Static switching off conditions: - VIN_OFF > 4 V "High"
- VIN_OFF < 2 V "Low"
- Input open
There is no turning off delay time in case of switching off with static High, cable interrupt (input open) and
short circuit to VDD
The turning off delay time is a multiple of the period of the oscillator frequency in case of switching off with
static Low or short-circuit to GND.
It has no fixed value but it depends on the phase position and is between 2*TPOSC and 6*TPOSC.
The dimension has to set to 6*TPOSC (worst case).
4. External PWM control of OUT
After fulfilment the turning-on condition and the turn-on delay time a Low - level of the external PWM -
signal at the input corresponds to a High - level of the PWM - signal at OUT.
5. Low-Indication of state
The input indicates the state in case of detecting undervoltage at VDD, undervoltage at O5V or
overtemperature.
During this errors the input is with low-resistance clamped to a low signal (approx. 1 V). In this state the
input current has to be external limited to maximum 30 mA.
During the active indication of state the supply current increases to about 5 mA.
OSC
The current source at the oscillator input delivers for the external capacitor COSC a reload current
of 50 µA respective -50 µA.
Resulting a triangle voltage on the pin OSC is produced. The lower switching threshold of the oscillator is
about 0.8 V; the upper threshold is about 4 V. The oscillator frequency is dependent on the technological
tolerance of the voltage VO5V.
The triangle voltage is internal transformed into a square-wave voltage.
Through frequency division by 4:1 an internal frequency of ¼ fOSC is realized for the analysis of the
external PWM signal.
The operational frequency range of Â1610 is between 50 - 5 000 Hz.
The external capacitor may be dimension approximately by
COSC [nF] = 7070 / fOSC [Hz]
Page 6/12 alpha mi croelectronics gm bh October 2000
IRCR
By external resistance RREF the reference current for the internal control currents is produced. The
voltage at this pin is in relationship to an internal voltage of 1.5 V.
A reference current of 50 µA require a value RREF = 30 k:
(IRREF = 1.5 V / 30 k:).
The tolerance and the temperature coefficient of the resistance RREF are directly entered into the
tolerance and the temperature coefficient the IINPT and fOSC.
OD
At this output the voltages of the both thermal reference diodes available for measurement and evaluation
purposes.
The voltage VOD has a temperature coefficient
TC_VOD ~ - 4 mV/K.
The output may be loaded with 50 nA maximally.
INPT
The internal current source at the input INPT drives a current of 50 µA.
The voltage at the external resistance RPT is internal compared to the voltage of the both reference
diodes.
The value of the resistor is used to set the chip cut-off temperature of the thermal protection infinitely
variable between Tjoff = 80 to 175 °C.
If the input INPT is connected to GND the thermal protection is inactive. If the input INPT is open, e.g. at
cable interruption, the output switches to Low (emergency cut-out).
The hysteresis of the thermal protection is typical 12 K and is produced by changing of the current
(50 µA / 25 µA) by the both Thermo-reference diodes.
The external resistance for a definite chip cut-off temperature Tjoff ’s calculated approximately as follows:
RPT = 22 k: - 0,058 k:/K * (Tjoff - 60 °C)
The calculated chip cut-off temperature is (TMes = measuring temperature):
Tjoff = [VOD( at TMes) – ((|IINP T (at TMes)|*RPT) + 6 mV)] / 4 mV/K + TMes
The tolerance of the chip cut-off temperature is typical r 6 K.
Instead of using the resistor RPT the chip cut-off temperature is adjustable by using of external Low-ohm
voltage source.
The Thermal Protection Circuit has a filter for gating out of short-term drops be caused by switching of the
output stage. At overtemperature the Low signal at the Comparator output in the Interference Suppression
will be saved in a scratch pad about 200 ns before every Low-High-Slope of the output signal.
With the next L/H-Slope of the output signal this Low Signal will be latched from the scratch pad into the
Latch.
The scratch pad and the Latch will be getting a reset signal if the comparator output goes to High.
This ensures fading down of incidental failures at the inquiry time.
In the case of standby or during the Indication State the rectangular oscillator signal takes over the control
of the scratch pad and the latch.
October 2000 alpha mi croelectronics gm bh Page 7/12
Absolute Maximum Ratings
Symbol Parameter Min Max Unit
VDD Supply Voltage -300 80 V
VDDC Block Capacitor 0 80 V
VIN Input Voltage -80 80 V
VDDC - VIN Difference Voltage -80 80 V
IDDC Output Current VDDC -40 0 mA
IOUT Output Current OUT -10 10 mA
IO12V Output Current O12V -10 0 mA
IO5V Output Current O5V -5 0 mA
IIN Input Current at Status Undervoltage or
Overtemperature 0 30 mA
IOVP Input Current OVP 0 1 mA
VOSC Input Voltage OSC 0 VO5V V
VINPT Input Voltage INPT 0 VO5V V
IOD Output Current OD -1 1 µA
IIRCR Input Current IRCR -100 0 µA
CDDC Block Capacitor VDDC depending VDD
VDD = 15 V
VDD = 45V
470
100
nF
nF
COUT Capacitor OUT 10 nF
CO12V Block Capacitor O12V 100 nF
CO5V Block Capacitor O5V 220 nF
Ta Ambient Temperature -40 150 °C
Tj Junction Temperature 175 °C
Tstg Storage Temperature Range -55 150 °C
Rthja Thermal Resistance SOP18 85 K/W
Electrical Characteristics
Operational Range
Symbol Parameter Min Max Unit
VDD Supply Voltage *) 8 45 V
CDDC Block Capacitor VDDC 100 nF
CO5V Block Capacitor O5V 100 nF
fOSC Oscillator Frequency 50 5000 Hz
Ta Ambient Temperature Range -40 150 °C
*) For VDD > 40 V an external Z-diode on Pi n OVP is necessary
Page 8/12 alpha mi croelectronics gm bh October 2000
DC Characteristics
at Ta = -40°C ... 150°C, VDD = 15 V
RREF = 30 k: ± 0 %, TCRREF = 0 ppm, COSC = 1.5 nF ± 0 %, TCCOSC = 0 ppm, CDDC = CO5V = 100 nF,
IDDC = IO12V = IO5V = 0, Pin INPT to GNDA, IN, OD, OVP and OUT open ; unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
IDD Current Consumption
VDD = 15 V
VDD = 45 V 1.4
1.7
2.5
2.5
mA
mA
VDD LON
VDD LOFF
Undervoltage Lockout
Turn on
Undervoltage Lockout
Turn off
6.6
7.7
7.0
8.0 V
V
VO12V Driver Supply Voltage IO12V = -10 µA
IO12V = -5 mA 11.0
10.0 12.5
12.0 14.0
14.0 V
V
VO5V Reference Voltage IO5V = 0 to -1.5 mA
VDD = 8 V to 45 V
4.75 5.00 5,25 V
VOUTH High Output Voltage IOUT = 0 mA
fIN_ON > 0,6*fOSC 11.0 12.5 14.0 V
VOUTL Low Output Voltage IOUT = 10 µA 200 mV
VOUTH High Output Voltage IOUT = -10 mA
fIN_ON > 0,6*fOSC 9.0 11.2 14.0 V
VOUTL Low Output Voltage IOUT = 10 mA 0,2 1,0 V
RDS(on) Driver Drain Source M2
On-State Resistance M3 VO12V = 12 V
Ta = 25 °C
45
20 :
:
IINPT Input Current INPT VINPT = 900 mV
TMes = 15 ... 35 °C -50 µA
VOD Output Voltage Diode
Temperature Sensor IOD = -50 nA
Ta = 25 °C
1320 mV
VIN Input Voltage at Status
Undervoltage or
Overtemperature
IIN = 30 mA 1.0 1.8 V
VINH Input Threshold High 3 4 V
VINL Input Threshold Low 2 2,5 V
VOVP Response Threshold
Overvoltage Protection IOVP = 100 µA 40 44 48 V
Tjoff Tolerance Chip Cut-off
Temperature **) TCRPT = 0 ppm -20 20 K
**) Calculated Chip Cut-off Temperature:
Tjoff = [ VOD (at TMes) – ((|IINPT (at TMes)|*RPT) + 6 mV)] / 4 mV/K + TMes
October 2000 alpha mi croelectronics gm bh Page 9/12
AC Characteristics
at Ta = -40 °C ... 150 °C, VDD = 8 V to 45 V, RREF = 30 k: ± 0 %, TCRREF = 0 ppm,
COSC = 1.5 nF ± 0 %, TCCOSC = 0 ppm; unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
fOSC Oscillator Frequency 4.3 4.7 5.1 kHz
fIN_ON Closing Condition fIN: Square-Wave
Signal 5 V 0.6*fOSC Hz
fIN_OFF Cut-off Condition 0.2*fOSC Hz
ESD Protection
at Ta = 25 °C -5 K, CEEC 90 000
Reference Pins: 14, 18
Human body model: C = 100 pF
R = 1.5 k:
Pin Prüfspannung
1 r 400 V
2 r 400 V
3 r 400 V
8 r 2000 V
9 r 2000 V
10 r 2000 V
11 r 2000 V
12 r 2000 V
15 r 400 V
16 r 400 V
17 r 400 V
Page 10/12 alpha mi croelectronics gm bh October 2000
Typical Performance Curves
Voltage V O12V versus Suppl y Voltage
Voltage VO5V versus Supply Voltage
Oscillator Frequency versus Supply Voltage
Oscillator Frequency versus ambient Temperature
Voltage V OD and VINPT vers us ambient Temperat ure,
Demons t ration of the Cut -off Tem perat ure
4
6
8
10
12
14
515253545
VDD [ V]
VO12V [V]
IO12V = -10 µA
Ta = -40 - 150 °C
3,75
4,25
4,75
5,25
5 15253545
VDD [ V]
V
O5V
[V]
IO5V = 0 to -1,5 mA
Ta = -40 - 150 °C
4675
4700
4725
5 15253545
VDD [V]
fOSC [Hz]
VO5V = 4,75 V to 5,25 V
COSC = 1,5 nF
Ta = 25 °C
4650
4675
4700
4725
4750
-50 0 50 100 150
Ta [°C]
fOSC [Hz]
VO5V = 4,75 V to 5,25 V
COSC = 1, 5 nF
800
900
1000
1100
1200
1300
1400
25 50 75 100 125 150
Ta [°C]
V [mV]
VOD
VINPT
RPT = 18 kΩ
IINPT typ = -50 µA
Toff = 129 °C
October 2000 alpha mi croelectronics gm bh Page 11/12
Package 18-pin Plastic SOP
11118765432
1118 17 16 15 14 13 12
11.55
r
0.2
7.50
r
0.1
0.42
r
0.09
10.16
1.27
2.65 max.2.4 m ax.
>0.4
8° m ax. 0.27
0.2
r
0.1
10.37
r
0.3
7
7.5
r
0.1
10
9
SOP 18
Page 12/12 alpha mi croelectronics gm bh October 2000
Note
It is not given warranty that the declared circ uits, devices , facilities , components, assembly groups or t reat ments included herein
are free from legal clai ms of third parties.
The declared data are onl y a description of product. They are not guaranteed properties as defined by law. The examples are gi ven
without obligation and cannot given rise t o any liability.
Reprinting t hi s data sheet - or part s of it - is only allowed with a licens e of the publis her.
alpha mi croelectronics gm bh reserves the right to m ak e changes on this specificati on without notice at any time.
alpha microelectronics gmbh
Im Technologiepark 1 Tel ++49-335-557 1750
15236 Frankfurt (Oder) Fax ++49-335-557 1759
Germany Internet www.alpha-microelectronics.de
email zinke@alpha-microelectronics.de
1610DSHe.doc
DIN EN ISO 9001
Zerti f ikat 15 10 0 078 3
