
UTC SFR1020 DIODE
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
www.unisonic.com.tw QW-R601-004,A
ABSOLUTE MAXIMUM RATINGS
(limiting values, per diode)
PARAMETER SYMBOL RATINGS UNIT
Repetitive peak reverse voltage VRRM 200 V
RMS forward current IF(RMS) 10 A
Average forward current δ= 0.5
TC=125℃ (Per diode) IF(AV) 5 A
Surge non repetitive forward current
tp=10ms sinusoidal IFSM 50 A
Storage temperature range Tstg -60 ~ +150 ℃
ELECTRICAL CHARACTERISTICS
(per diode)
PARAMETER SYMBOL TEST CONDITONS MIN TYP MAX UNIT
Tj = 25℃ 50 µA
Reverse leakage current IR * Tj = 100℃ VR = VRRM 0.6 mA
Tj = 125℃ IF= 5 A 0.8 0.99
Tj = 125℃ IF= 10 A 0.95 1.20
Forward voltage drop VF **
Tj = 25℃ IF = 10 A 1.25
V
* tp = 5 ms, δ< 2 %
** tp = 380 µs, δ< 2 %
To evaluate the conduction losses use the following equation: P = 0.78× IF(AV) + 0.042 × IF2(RMS)
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Reverse recovery time trr Tj = 25℃, IF = 0.5A , Irr = 0.25A , IR = 1A 30 ns
Formard recovery time tfr Tj = 25℃, IF= 1A, dIF/dt = 50 A/µs
VFR = 1.1×VF max
20 ns
VFP Tj = 25℃, IF= 1A, dIF/dt = 50 A/µs 3 V
THERMAL RESISTANCES
PARAMETER SYMBOL RATINGS UNIT
Per diode 4.0
Junction to case
Total Rth (j-c)
2.4
Coupling Rth (c) 0.7
℃/W
When diodes 1 and 2 are used simultaneously :
∆Tj (diode 1) = P(diode 1)×Rth(j-c)(Per diode) + P(diode 2) × Rth(c)