TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
DFully Specified for 3.3-V and 5-V Operation
DWide Power Supply Compatibility
2.5 V – 5.5 V
DOutput Power for RL = 8 Ω
– 350 mW at VDD = 5 V, BTL
– 250 mW at VDD = 5 V, SE
– 250 mW at VDD = 3.3 V, BTL
– 75 mW at VDD = 3.3 V, SE
DShutdown Control
– IDD = 7 µA at 3.3 V
– IDD = 60 µA at 5 V
DBTL to SE Mode Control
DIntegrated Depop Circuitry
DThermal and Short-Circuit Protection
DSurface Mount Packaging
– SOIC
– PowerPAD MSOP
description
The TPA311 is a bridge-tied load (BTL) or
single-ended (SE) audio power amplifier devel-
oped especially for low-voltage applications
where internal speakers and external earphone
operation are required. Operating with a 3.3-V
supply, the TPA311 can deliver 250-mW of
continuous power into a BTL 8-Ω load at less than 1% THD+N throughout voice band frequencies. Although
this device is characterized out to 20 kHz, its operation was optimized for narrower band applications such as
cellular communications. The BTL configuration eliminates the need for external coupling capacitors on the
output in most applications, which is particularly important for small battery-powered equipment. A unique
feature of the TPA31 1 is that it allows the amplifier to switch from BTL to SE on the fly when an earphone drive
is required. This eliminates complicated mechanical switching or auxiliary devices just to drive the external load.
This device features a shutdown mode for power-sensitive applications with special depop circuitry to virtually
eliminate speaker noise when exiting shutdown mode and during power cycling. The TP A311 is available in an
8-pin SOIC surface-mount package and the surface-mount PowerPAD MSOP, which reduces board space by
50% and height by 40%.
Audio
Input
Bias
Control
350 mW
6
5
7
VO+
VDD
3
1
2
4
BYPASS
IN
SE/BTL
VDD/2
CI
RI
CS
CBF
RF
SHUTDOWN
From HP Jack
VO–8
GND
From System Control
CC
–
+
–
+
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1998 – 2003, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
2
3
4
8
7
6
5
SHUTDOWN
BYPASS
SE/BTL
IN
VO–
GND
VDD
VO+
D OR DGN PACKAGE
(TOP VIEW)
PowerPAD is a trademark of Texas Instruments.
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
2POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
AVAILABLE OPTIONS
PACKAGED DEVICES
MSOP
TASMALL OUTLINE†
(D) MSOP†
(DGN)
MSOP
Symbolization
–40°C to 85°C TPA311D TPA311DGN AAB
†The D and DGN packages are available taped and reeled. To order a taped and reeled part, add
the suffix R to the part number (e.g., TPA311DR).
Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME NO. I/O DESCRIPTION
BYPASS 2 I BYP ASS is the tap to the voltage divider for internal mid-supply bias. This terminal should be connected
to a 0.1-µF to 1-µF capacitor when used as an audio amplifier.
GND 7 GND is the ground connection.
IN 4 I IN is the audio input terminal.
SE/BTL 3 I When SE/BTL is held low, the TPA311 is in BTL mode. When SE/BTL is held high, the TP A311 is in SE
mode.
SHUTDOWN 1 I SHUTDOWN places the entire device in shutdown mode when held high (IDD = 60 µA, VDD = 5 V).
VDD 6 VDD is the supply voltage terminal.
VO+ 5 O VO+ is the positive output for BTL and SE modes.
VO–8 O VO– is the negative output in BTL mode and a high-impedance output in SE mode.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)‡
Supply voltage, VDD 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, VI –0.3 V to VDD +0.3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation internally limited (see Dissipation Rating Table). . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, TA (see Table 3) –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating junction temperature range, TJ –40°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
‡Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may af fect device reliability.
DISSIPATION RATING TABLE
PACKAGE TA ≤ 25°CDERATING FACTOR TA = 70°C TA = 85°C
D725 mW 5.8 mW/°C464 mW 377 mW
DGN 2.14 W§17.1 mW/°C1.37 W 1.11 W
§Please see the Texas Instruments document, PowerPAD Thermally Enhanced Package Application Report
(literature number SLMA002), for more information on the PowerPAD package. The thermal data was
measured on a PCB layout based on the information in the section entitled T exas Instruments Recommended
Board for PowerPAD on page 33 of the before mentioned document.
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
recommended operating conditions
MIN MAX UNIT
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Supply voltage, VDD
ÁÁÁ
ÁÁÁ
2.5
ÁÁÁÁ
ÁÁÁÁ
5.5
ÁÁÁ
ÁÁÁ
V
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
High level voltage VIH
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
SHUTDOWN
ÁÁÁ
ÁÁÁ
0.9 VDD
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
High-level voltage, VIH
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
SE/BTL
ÁÁÁ
ÁÁÁ
0.9 VDD
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁ
ÁÁÁ
V
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
Low level voltage VIL
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
SHUTDOWN
ÁÁÁ
ÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
0.1 VDD
ÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
Low-level voltage, VIL
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
SE/BTL
ÁÁÁ
ÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
0.1 VDD
ÁÁÁ
ÁÁÁ
V
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Operating free-air temperature, TA (see Table 3)
ÁÁÁ
ÁÁÁ
–40
ÁÁÁÁ
ÁÁÁÁ
85
ÁÁÁ
ÁÁÁ
°C
electrical characteristics at specified free-air temperature, VDD = 3.3 V , TA = 25°C (unless otherwise
noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ÁÁÁ
ÁÁÁ
|VOO|
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
Output offset voltage (measured dif ferentially)
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
SHUTDOWN = 0 V, SE/BTL = 0 V, RL = 8 Ω,
RF = 10 kΩ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
5
ÁÁÁ
ÁÁÁ
20
ÁÁÁ
ÁÁÁ
mV
ÁÁÁ
ÁÁÁ
PSRR
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
Power supply rejection ratio
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
V 32Vto34V
ÁÁÁÁ
ÁÁÁÁ
BTL mode
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
85
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
PSRR
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
Power supply rejection ratio
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
VDD = 3.2 V to 3.4 V
ÁÁÁÁ
ÁÁÁÁ
SE mode
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
83
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
dB
ÁÁÁ
ÁÁÁ
I
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
Supply current (see Figure 6)
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
SHUTDOWN = 0 V,
SE/BTL = 0.33 V, RF = 10 kΩ
ÁÁÁÁ
ÁÁÁÁ
BTL mode
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
0.7
ÁÁÁ
ÁÁÁ
1.5
ÁÁÁ
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
IDD
ÁÁÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁÁ
Supply current (see Figure 6)
ÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁ
SHUTDOWN = 0 V,
SE/BTL = 2.97 V, RF = 10 kΩ
ÁÁÁÁ
Á
ÁÁ
Á
ÁÁÁÁ
SE mode
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
0.35
ÁÁÁ
Á
Á
Á
ÁÁÁ
0.75
ÁÁÁ
Á
Á
Á
ÁÁÁ
mA
ÁÁÁ
Á
Á
Á
ÁÁÁ
IDD(SD)
ÁÁÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁÁ
Supply current, shutdown mode
(see Figure 7)
ÁÁÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁÁ
SHUTDOWN = VDD, SE/BTL = 0 V,
RF = 10 kΩ
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
7
ÁÁÁ
Á
Á
Á
ÁÁÁ
50
ÁÁÁ
Á
Á
Á
ÁÁÁ
µA
ÁÁÁ
ÁÁÁ
|IIH|
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
High level in
p
ut current
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
SHUTDOWN, VDD = 3.3 V, VI = VDD
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
1
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
|IIH|
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
High-level input current
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
SE/BTL, VDD = 3.3 V, VI = VDD
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
1
ÁÁÁ
ÁÁÁ
µA
ÁÁÁ
ÁÁÁ
|IIL|
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
Low level in
p
ut current
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
SHUTDOWN, VDD = 3.3 V, VI = 0 V
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
1
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
|IIL|
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
Low-level input current
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
SE/BTL, VDD = 3.3 V, VI = 0 V
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
1
ÁÁÁ
ÁÁÁ
µA
operating characteristics, VDD = 3.3 V, TA = 25°C, RL = 8 Ω
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ÁÁÁÁ
ÁÁÁÁ
P
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
Output power see Note 1
ÁÁÁÁÁ
ÁÁÁÁÁ
THD = 0.5%,
ÁÁÁÁÁÁ
ÁÁÁÁÁÁ
BTL mode,
ÁÁÁÁÁ
ÁÁÁÁÁ
See Figure 14
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
250
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
mW
ÁÁÁÁ
ÁÁÁÁ
PO
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
Output power, see Note 1
ÁÁÁÁÁ
ÁÁÁÁÁ
THD = 0.5%,
ÁÁÁÁÁÁ
ÁÁÁÁÁÁ
SE mode
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
110
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
mW
ÁÁÁÁ
Á
ÁÁ
Á
ÁÁÁÁ
THD + N
ÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁ
Total harmonic distortion plus
noise
ÁÁÁÁÁ
Á
ÁÁÁ
Á
ÁÁÁÁÁ
PO = 250 mW,
See Figure 12
ÁÁÁÁÁÁ
Á
ÁÁÁÁ
Á
ÁÁÁÁÁÁ
f = 20 Hz to 4 kHz,
ÁÁÁÁÁ
Á
ÁÁÁ
Á
ÁÁÁÁÁ
AV = – 2 V/V,
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
1.3%
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
BOM
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
Maximum output power bandwidth
ÁÁÁÁÁ
ÁÁÁÁÁ
AV = – 2 V/V,
ÁÁÁÁÁÁ
ÁÁÁÁÁÁ
THD = 3%,
ÁÁÁÁÁ
ÁÁÁÁÁ
See Figure 12
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
10
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
kHz
ÁÁÁÁ
B1
ÁÁÁÁÁÁÁÁÁ
Unity-gain bandwidth
ÁÁÁÁÁ
Open loop,
ÁÁÁÁÁÁ
See Figure 36
ÁÁÁÁÁ
ÁÁÁ
ÁÁÁ
1.4
ÁÁÁ
ÁÁÁ
MHz
ÁÁÁÁ
Á
ÁÁ
Á
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁ
Supply ripple rejection ratio
ÁÁÁÁÁ
Á
ÁÁÁ
Á
ÁÁÁÁÁ
f = 1 kHz,
See Figure 5
ÁÁÁÁÁÁ
Á
ÁÁÁÁ
Á
ÁÁÁÁÁÁ
CB = 1 µF,
ÁÁÁÁÁ
Á
ÁÁÁ
Á
ÁÁÁÁÁ
BTL mode,
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
71
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
dB
ÁÁÁÁ
Á
ÁÁ
Á
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁ
Supply ripple rejection ratio
ÁÁÁÁÁ
Á
ÁÁÁ
Á
ÁÁÁÁÁ
f = 1 kHz,
See Figure 3
ÁÁÁÁÁÁ
Á
ÁÁÁÁ
Á
ÁÁÁÁÁÁ
CB = 1 µF,
ÁÁÁÁÁ
Á
ÁÁÁ
Á
ÁÁÁÁÁ
SE mode,
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
86
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
dB
ÁÁÁÁ
ÁÁÁÁ
Vn
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
Noise output voltage
ÁÁÁÁÁ
ÁÁÁÁÁ
AV = – 1 V/V,
BTL,
ÁÁÁÁÁÁ
ÁÁÁÁÁÁ
CB = 0.1 µF,
See Figure 42
ÁÁÁÁÁ
ÁÁÁÁÁ
RL = 32 Ω,
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
15
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
µV(rms)
NOTE 1: Output power is measured at the output terminals of the device at f = 1 kHz.
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
4POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V, T A = 25°C (unless otherwise
noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ÁÁÁÁ
Á
ÁÁ
Á
ÁÁÁÁ
|VOO|
ÁÁÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁÁ
Output offset voltage (measured dif ferentially)
ÁÁÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁÁ
SHUTDOWN = 0 V, SE/BTL = 0 V,
RL = 8 Ω, RF = 10 kΩ
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
5
ÁÁÁ
Á
Á
Á
ÁÁÁ
20
ÁÁÁ
Á
Á
Á
ÁÁÁ
mV
ÁÁÁÁ
ÁÁÁÁ
PSRR
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
Power supply rejection ratio
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
V 49Vto51V
ÁÁÁÁ
ÁÁÁÁ
BTL mode
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
78
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁÁ
PSRR
ÁÁÁÁÁÁÁÁÁÁÁÁ
Power supply rejection ratio
ÁÁÁÁÁÁÁÁÁ
VDD = 4.9 V to 5.1 V
ÁÁÁÁ
SE mode
ÁÁÁ
ÁÁÁ
76
ÁÁÁ
ÁÁÁ
dB
ÁÁÁÁ
Á
ÁÁ
Á
ÁÁÁÁ
I
ÁÁÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁÁ
Supply current (see Figure 6)
ÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁ
SHUTDOWN = 0 V,
SE/BTL = 0.5 V, RF = 10 kΩ
ÁÁÁÁ
Á
ÁÁ
Á
ÁÁÁÁ
BTL mode
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
0.7
ÁÁÁ
Á
Á
Á
ÁÁÁ
1.5
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁÁ
Á
ÁÁ
Á
ÁÁÁÁ
IDD
ÁÁÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁÁ
Supply current (see Figure 6)
ÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁ
SHUTDOWN = 0 V,
SE/BTL = 4.5 V, RF = 10Ω
ÁÁÁÁ
Á
ÁÁ
Á
ÁÁÁÁ
SE mode
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
0.35
ÁÁÁ
Á
Á
Á
ÁÁÁ
0.75
ÁÁÁ
Á
Á
Á
ÁÁÁ
mA
ÁÁÁÁ
ÁÁÁÁ
IDD(SD)
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
Supply current, shutdown mode
(see Figure 7)
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
SHUTDOWN = VDD, SE/BTL = 0 V,
RF = 10 kΩ,
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
60
ÁÁÁ
ÁÁÁ
100
ÁÁÁ
ÁÁÁ
µA
ÁÁÁÁ
ÁÁÁÁ
|IIH|
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
High level in
p
ut current
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
SHUTDOWN, VDD = 5.5 V, VI = VDD
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
1
ÁÁÁ
ÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
|IIH|
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
High-level input current
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
SE/BTL, VDD = 5.5 V, VI = VDD
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
1
ÁÁÁ
ÁÁÁ
µA
ÁÁÁÁ
ÁÁÁÁ
|IIL|
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
Low level in
p
ut current
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
SHUTDOWN, VDD = 5.5 V, VI = 0 V
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
1
ÁÁÁ
ÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
|IIL|
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
Low-level input current
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
SE/BTL, VDD = 5.5 V, VI = 0 V
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
1
ÁÁÁ
ÁÁÁ
µA
operating characteristics, VDD = 5 V, TA = 25°C, RL = 8 Ω
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ÁÁÁÁ
ÁÁÁÁ
P
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
Output power see Note 2
ÁÁÁÁÁ
ÁÁÁÁÁ
THD = 0.5%,
ÁÁÁÁÁÁ
ÁÁÁÁÁÁ
BTL mode,
ÁÁÁÁÁ
ÁÁÁÁÁ
See Figure 18
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
700
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
mW
ÁÁÁÁ
ÁÁÁÁ
PO
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
Output power, see Note 2
ÁÁÁÁÁ
ÁÁÁÁÁ
THD = 0.5%,
ÁÁÁÁÁÁ
ÁÁÁÁÁÁ
SE mode
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
300
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
mW
ÁÁÁÁ
ÁÁÁÁ
THD + N
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
Total harmonic distortion plus
noise
ÁÁÁÁÁ
ÁÁÁÁÁ
PO = 350 mW,
See Figure 16
ÁÁÁÁÁÁ
ÁÁÁÁÁÁ
f = 20 Hz to 4 kHz,
ÁÁÁÁÁ
ÁÁÁÁÁ
AV = – 2 V/V,
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
1%
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
BOM
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
Maximum output power bandwidth
ÁÁÁÁÁ
ÁÁÁÁÁ
AV = – 2 V/V,
ÁÁÁÁÁÁ
ÁÁÁÁÁÁ
THD = 2%,
ÁÁÁÁÁ
ÁÁÁÁÁ
See Figure 16
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
10
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
kHz
ÁÁÁÁ
ÁÁÁÁ
B1
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
Unity-gain bandwidth
ÁÁÁÁÁ
ÁÁÁÁÁ
Open loop,
ÁÁÁÁÁÁ
ÁÁÁÁÁÁ
See Figure 37
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
1.4
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
MHz
ÁÁÁÁ
Á
ÁÁ
Á
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
Supply ripple rejection ratio
ÁÁÁÁÁ
Á
ÁÁÁ
Á
ÁÁÁÁÁ
f = 1 kHz,
See Figure 5
ÁÁÁÁÁÁ
Á
ÁÁÁÁ
Á
ÁÁÁÁÁÁ
CB = 1 µF,
ÁÁÁÁÁ
Á
ÁÁÁ
Á
ÁÁÁÁÁ
BTL mode,
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
65
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
dB
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
Supply ripple rejection ratio
ÁÁÁÁÁ
ÁÁÁÁÁ
f = 1 kHz,
See Figure 4
ÁÁÁÁÁÁ
ÁÁÁÁÁÁ
CB = 1 µF,
ÁÁÁÁÁ
ÁÁÁÁÁ
SE mode,
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
75
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
dB
ÁÁÁÁ
Á
ÁÁ
Á
ÁÁÁÁ
Vn
ÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
Noise output voltage
ÁÁÁÁÁ
Á
ÁÁÁ
Á
ÁÁÁÁÁ
AV = – 1 V/V,
BTL,
ÁÁÁÁÁÁ
Á
ÁÁÁÁ
Á
ÁÁÁÁÁÁ
CB = 0.1 µF,
See Figure 43
ÁÁÁÁÁ
Á
ÁÁÁ
Á
ÁÁÁÁÁ
RL = 32 Ω,
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
15
ÁÁÁ
Á
Á
Á
ÁÁÁ
ÁÁÁ
Á
Á
Á
ÁÁÁ
µV(rms)
NOTE 2: Output power is measured at the output terminals of the device at f = 1 kHz.
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
Audio
Input
Bias
Control
VDD
6
5
7
VO+
VDD
3
1
2
4
BYPASS
IN
SE/BTL
VDD/2
CI
RI
CS
1 µF
CB
0.1 µF
RF
SHUTDOWN
VO–8
RL = 8 Ω
GND
–
+
–
+
Figure 1. BTL Mode Test Circuit
Audio
Input
Bias
Control
VDD
6
5
7
VO+
VDD
3
1
2
4
BYPASS
IN
SE/BTL
VDD/2
CI
RI
CS
1 µF
CB
0.1 µF
RF
SHUTDOWN
VO–8
RL = 32 Ω
GND
CC
330 µF
VDD
–
+
–
+
Figure 2. SE Mode Test Circuit
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
6POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
Supply voltage rejection ratio vs Frequency 3, 4, 5
IDD Supply current vs Supply voltage 6, 7
P
Output power
vs Supply voltage 8, 9
POOutput power vs Load resistance 10, 11
THD N
Total harmonic distortion plus noise
vs Frequency 12, 13, 16, 17, 20,
21, 24, 25, 28, 29,
32, 33
THD+N Total harmonic distortion plus noise
vs Output power 14, 15, 18, 19, 22,
23, 26, 27, 30, 31,
34, 35
Open loop gain and phase vs Frequency 36, 37
Closed loop gain and phase vs Frequency 38, 39, 40, 41
VnOutput noise voltage vs Frequency 42, 43
PDPower dissipation vs Output power 44, 45, 46, 47
Figure 3
–50
–60
–80
–10020 100 1 k
–30
–20
f – Frequency – Hz
SUPPLY VOLTAGE REJECTION RATIO
vs
FREQUENCY
0
10 k 20 k
–10
–40
–70
–90 BYPASS = 1/2 VDD
CB = 0.1 µF
VDD = 3.3 V
RL = 8 Ω
SE
CB = 1 µF
Supply Voltage Rejection Ratio – dB
Figure 4
–50
–60
–80
–10020 100 1 k
–30
–20
f – Frequency – Hz
SUPPLY VOLTAGE REJECTION RATIO
vs
FREQUENCY
0
10 k 20 k
–10
–40
–70
–90
BYPASS = 1/2 VDD
CB = 0.1 µF
VDD = 5 V
RL = 8 Ω
SE
CB = 1 µF
Supply Voltage Rejection Ratio – dB
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 5
–50
–60
–80
–10020 100 1 k
–30
–20
f – Frequency – Hz
SUPPLY VOLTAGE REJECTION RATIO
vs
FREQUENCY
0
10 k 20 k
–10
–40
–70
–90
VDD = 5 V
VDD = 3.3 V
RL = 8 Ω
CB = 1 µF
BTL
Supply Voltage Rejection Ratio – dB
Figure 6
VDD – Supply Voltage – V
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
1.1
0.7
0.3
–0.1
0.9
0.5
0.1
34 62 5
SE/BTL = 0.1 VDD
IDD– Supply Current – mA
SHUTDOWN = 0 V
RF = 10 kΩ
SE/BTL = 0.9 VDD
VDD – Supply Voltage – V
SUPPLY CURRENT (SHUTDOWN)
vs
SUPPLY VOLTAGE
20
10
0343.5 4.5
60
25
30
SHUTDOWN = VDD
SE/BTL = 0 V
RF = 10 kΩ
40
50
5.52.5
70
80
90
IDD(SD)– Supply Current – Aµ
Figure 7
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
8POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 8
VDD – Supply Voltage – V
OUTPUT POWER
vs
SUPPLY VOLTAGE
600
400
200
02.5 3.53 4 5.5
1000
2
P
4.5 5
O– Output Power – mW
800
THD+N 1%
BTL
RL = 32 Ω
RL = 8 Ω
Figure 9
VDD – Supply Voltage – V
OUTPUT POWER
vs
SUPPLY VOLTAGE
150
100
50
0343.5 4.5
350
2
P
5
O– Output Power – mW
200
THD+N 1%
SE
RL = 32 Ω
RL = 8 Ω
250
300
5.52.5
Figure 10
RL – Load Resistance – Ω
OUTPUT POWER
vs
LOAD RESISTANCE
300
200
100
016 3224 40 64
800
8
P
48 56
O– Output Power – mW
400
THD+N = 1%
BTL
VDD = 5 V
500
600
VDD = 3.3 V
700
Figure 11
RL – Load Resistance – Ω
OUTPUT POWER
vs
LOAD RESISTANCE
14 2620 32 5083844
THD+N = 1%
SE
VDD = 5 V
VDD = 3.3 V
56 62
150
100
50
0
350
PO– Output Power – mW
200
250
300
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 12
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
AV = –2 V/V
VDD = 3.3 V
PO = 250 mW
RL = 8 Ω
BTL
20 1k 10k
1
0.01
10
0.1
20k100
AV = –20 V/V
AV = –10 V/V
Figure 13
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
PO = 125 mW
VDD = 3.3 V
RL = 8 Ω
AV = –2 V/V
BTL
20 1k 10k
1
0.01
10
0.1
20k100
PO = 50 mW
PO = 250 mW
Figure 14
PO – Output Power – W
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
RL = 8 Ω
0.04 0.1 0.4
1
0.01
10
0.1
0.16 0.22 0.28 0.34
VDD = 3.3 V
f = 1 kHz
AV = –2 V/V
BTL
Figure 15
PO – Output Power – W
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
f = 20 Hz VDD = 3.3 V
RL = 8 Ω
AV = –2 V/V
BTL
0.01 0.1 1
1
0.01
10
0.1
f = 1 kHz
f = 10 kHz
f = 20 kHz
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 16
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
AV = –2 V/V
VDD = 5 V
PO = 350 mW
RL = 8 Ω
BTL
20 1k 10k
1
0.01
10
0.1
20k100
AV = –20 V/V
AV = –10 V/V
Figure 17
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
PO = 175 mW
VDD = 5 V
RL = 8 Ω
AV = –2 V/V
BTL
20 1k 10k
1
0.01
10
0.1
20k100
PO = 50 mW
PO = 350 mW
Figure 18
PO – Output Power – W
0.1 0.25 10.40 0.55 0.70 0.85
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
RL = 8 Ω
VDD = 5 V
f = 1 kHz
AV = –2 V/V
BTL
1
0.01
10
0.1
Figure 19
PO – Output Power – W
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
f = 20 Hz
VDD = 5 V
RL = 8 Ω
AV = –2 V/V
BTL
0.01 0.1 1
1
0.01
10
0.1
f = 1 kHz
f = 10 kHz
f = 20 kHz
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 20
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
AV = –10 V/V
VDD = 3.3 V
PO = 30 mW
RL = 32 Ω
SE
20 1k 10k
0.1
0.001
10
0.01
20k100
AV = –1 V/V
1
AV = –5 V/V
Figure 21
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
VDD = 3.3 V
RL = 32 Ω
AV = –1 V/V
SE
20 1k 10k
0.1
0.001
10
0.01
20k100
PO = 10 mW
PO = 15 mW
1
PO = 30 mW
Figure 22
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
VDD = 3.3 V
f = 1 kHz
RL = 32 Ω
AV = –1 V/V
SE
1
0.01
10
0.1
PO – Output Power – W
0.02 0.025 0.050.03 0.035 0.04 0.045
Figure 23
PO – Output Power – W
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
f = 20 Hz
VDD = 3.3 V
RL = 32 Ω
AV = –1 V/V
SE
1
0.01
10
0.1 f = 1 kHz
f = 10 kHz
f = 20 kHz
0.002 0.03 0.050.01 0.02
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
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TYPICAL CHARACTERISTICS
Figure 24
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
AV = –10 V/V
VDD = 5 V
PO = 60 mW
RL = 32 Ω
SE
20 1k 10k
0.1
0.001
10
0.01
20k100
AV = –1 V/V
1
AV = –5 V/V
Figure 25
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
VDD = 5 V
RL = 32 Ω
AV = –1 V/V
SE
20 1k 10k
0.1
0.001
10
0.01
20k100
PO = 15 mW
PO = 60 mW
1
PO = 30 mW
Figure 26
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
VDD = 5 V
f = 1 kHz
RL = 32 Ω
AV = –1 V/V
SE
1
0.01
10
0.1
PO – Output Power – W
0.02 0.04 0.140.06 0.08 0.1 0.12
Figure 27
PO – Output Power – W
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
f = 20 Hz VDD = 5 V
RL = 32 Ω
AV = –1 V/V
SE
1
0.01
10
0.1 f = 1 kHz
f = 10 kHz
f = 20 kHz
0.002 0.1 0.20.01
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
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TYPICAL CHARACTERISTICS
Figure 28
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
VDD = 3.3 V
PO = 0.1 mW
RL = 10 kΩ
SE
20 1k 10k
0.1
0.01
1
20k100
AV = –1 V/V
AV = –2 V/V
AV = –5 V/V
Figure 29
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
VDD = 3.3 V
RL = 10 kΩ
AV = –1 V/V
SE
20 1 k 10 k
0.1
0.01
1
20 k100
PO = 0.13 mW
PO = 0.1 mW
PO = 0.05 mW
Figure 30
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
VDD = 3.3 V
f = 1 kHz
RL = 10 kΩ
AV = –1 V/V
SE
0.1
0.001
10
0.01
1
PO – Output Power – µW
50 75 200100 125 150 175
Figure 31
PO – Output Power – µW
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
f = 20 Hz
VDD = 3.3 V
RL = 10 kΩ
AV = –1 V/V
SE
f = 1 kHz
f = 10 kHz
f = 20 kHz
5 100 500
0.1
0.001
10
0.01
1
10
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
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TYPICAL CHARACTERISTICS
Figure 32
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
VDD = 5 V
PO = 0.3 mW
RL = 10 kΩ
SE
20 1k 10k
0.1
0.01
1
20k100
AV = –1 V/V
AV = –2 V/V
AV = –5 V/V
Figure 33
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
VDD = 5 V
RL = 10 kΩ
AV = –1 V/V
SE
20 1k 10k
0.1
0.01
1
20k100
PO = 0.3 mW
PO = 0.1 mW
PO = 0.2 mW
Figure 34
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
VDD = 5 V
f = 1 kHz
RL = 10 kΩ
AV = –1 V/V
SE
0.1
0.001
10
0.01
1
PO – Output Power – µW
50 125 500200 275 350 425
Figure 35
PO – Output Power – µW
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
f = 20 Hz
VDD = 5 V
RL = 10 kΩ
AV = –1 V/V
SE
f = 1 kHz
f = 10 kHz
f = 20 kHz
5 100 500
0.1
0.001
10
0.01
1
10
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
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TYPICAL CHARACTERISTICS
10
0
–20
–30
20
30
f – Frequency – kHz
40
–10
180
120
0
–120
–180
VDD = 3.3 V
RL = Open
BTL
Gain
Phase
60
–60
OPEN-LOOP GAIN AND PHASE
vs
FREQUENCY
Open-Loop Gain – dB
Phase –°
1101102103104
Figure 36
10
0
–20
–30 1
20
30
f – Frequency – kHz
40
–10
180
120
0
–120
–180
VDD = 5 V
RL = Open
BTL
Gain
Phase
60
–60
OPEN-LOOP GAIN AND PHASE
vs
FREQUENCY
Open-Loop Gain – dB
Phase –°
101102103104
Figure 37
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350-mW MONO AUDIO POWER AMPLIFIER
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TYPICAL CHARACTERISTICS
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
–0.5
–1
–1.5
–2
f – Frequency – Hz
–0.25
–0.75
–1.25
–1.75
0
0.5
Closed-Loop Gain – dB
0.25
0.75
130
120
140
Phase –°
150
160
VDD = 3.3 V
RL = 8 Ω
PO = 0.25 W
CI =1 µF
BTL
1
170
180
Gain
Phase
101102103104105106
Figure 38
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
–0.5
–1
–1.5
–2
f – Frequency – Hz
–0.25
–0.75
–1.25
–1.75
0
0.5
Closed-Loop Gain – dB
0.25
0.75
130
120
140
Phase –°
150
160
VDD = 5 V
RL = 8 Ω
PO = 0.35 W
CI =1 µF
BTL
1
170
180
Gain
Phase
101102103104105106
Figure 39
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
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TYPICAL CHARACTERISTICS
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
3
1
–1
–3
f – Frequency – Hz
4
2
0
–2
5
7
Closed-Loop Gain – dB
6
VDD = 3.3 V
RL = 32 Ω
AV = –2 V/V
PO = 30 mW
CI =1 µF
CC =470 µF
SE
Gain
Phase
110
100
120
Phase –°
130
140
150
180
160
170
101102103104105106
Figure 40
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
4
2
0
–2
f – Frequency – Hz
5
3
1
–1
6
Closed-Loop Gain – dB
7
110
100
120
Phase –°
130
140
VDD = 5 V
RL = 32 Ω
AV = –2 V/V
PO = 60 mW
CI =1 µF
CC =470 µF
SE
150
180
Gain
Phase
160
170
101102103104105106
Figure 41
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
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TYPICAL CHARACTERISTICS
Figure 42
– Output Noise Voltage –µVn
f – Frequency – Hz
OUTPUT NOISE VOLTAGE
vs
FREQUENCY
20 1 k 10 k
10
1
100
20 k100
VO BTL
VDD = 3.3 V
BW = 22 Hz to 22 kHz
RL = 32 Ω
CB =0.1 µF
AV = –1 V/V
VO+
V(rms)
Figure 43
– Output Noise Voltage –µVn
f – Frequency – Hz
OUTPUT NOISE VOLTAGE
vs
FREQUENCY
20 1 k 10 k
10
1
100
20 k100
VDD = 5 V
BW = 22 Hz to 22 kHz
RL = 32 Ω
CB =0.1 µF
AV = –1 V/V
VO BTL
VO+
V(rms)
Figure 44
PO – Output Power – mW
POWER DISSIPATION
vs
OUTPUT POWER
200 4000
180
150
120
90
300
PD– Power Dissipation – mW
210
240
270
VDD = 3.3 V
RL = 8 Ω
BTL
100 300
Figure 45
PO – Output Power – mW
POWER DISSIPATION
vs
OUTPUT POWER
60 1200
VDD = 3.3 V
SE
24
16
8
0
56
PD– Power Dissipation – mW
32
40
48
RL = 8 Ω
RL = 32 Ω
80
64
72
30 90
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
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TYPICAL CHARACTERISTICS
Figure 46
PO – Output Power – mW
POWER DISSIPATION
vs
OUTPUT POWER
200 600400 8000 1000 1200
VDD = 5 V
RL = 8 Ω
BTL
400
320
240
160
720
PD– Power Dissipation – mW
480
560
640
Figure 47
PO – Output Power – mW
POWER DISSIPATION
vs
OUTPUT POWER
50 150100 2000 250 300
VDD = 5 V
SE
100
80
60
40
180
PD– Power Dissipation – mW
120
140
160 RL = 8 Ω
RL = 32 Ω
APPLICATION INFORMATION
bridge-tied load versus single-ended mode
Figure 48 shows a linear audio power amplifier (APA) in a BTL configuration. The TPA311 BTL amplifier consists
of two linear amplifiers driving both ends of the load. There are several potential benefits to this differential drive
configuration but initially consider power to the load. The differential drive to the speaker means that as one side
is slewing up, the other side is slewing down, and vice versa. This in effect doubles the voltage swing on the
load as compared to a ground referenced load. Plugging 2 × VO(PP) into the power equation, where voltage is
squared, yields 4× the output power from the same supply rail and load impedance (see equation 1).
Power +V(rms)2
RL(1)
V(rms) +VO(PP)
22
Ǹ
TPA311
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APPLICATION INFORMATION
bridge-tied load versus single-ended mode (continued)
RL2x VO(PP)
VO(PP)
–VO(PP)
VDD
VDD
Figure 48. Bridge-Tied Load Configuration
In typical portable handheld equipment, a sound channel operating at 3.3 V and using bridging raises the power
into an 8-Ω speaker from a single-ended (SE, ground reference) limit of 62.5 mW to 250 mW . In terms of sound
power that is a 6-dB improvement, which is loudness that can be heard. In addition to increased power there
are frequency response concerns. Consider the single-supply SE configuration shown in Figure 49. A coupling
capacitor is required to block the dc offset voltage from reaching the load. These capacitors can be quite large
(approximately 33 µF to 1000 µF), tend to be expensive, heavy, and occupy valuable PCB area. These
capacitors also have the additional drawback of limiting low-frequency performance of the system. This
frequency limiting effect is due to the high-pass filter network created with the speaker impedance and the
coupling capacitance and is calculated with equation 2.
fc+1
2pRLCC(2)
For example, a 68-µF capacitor with an 8-Ω speaker would attenuate low frequencies below 293 Hz. The BTL
configuration cancels the dc offsets, which eliminates the need for the blocking capacitors. Low-frequency
performance is then limited only by the input network and speaker response. Cost and PCB space are also
minimized by eliminating the bulky coupling capacitor.
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
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APPLICATION INFORMATION
bridge-tied load versus single-ended mode (continued)
RL
CCVO(PP)
VO(PP)
VDD
–3 dB
fc
Figure 49. Single-Ended Configuration and Frequency Response
Increasing power to the load does carry a penalty of increased internal power dissipation. The increased
dissipation is understandable, considering that the BTL configuration produces 4× the output power of the SE
configuration. Internal dissipation versus output power is discussed further in the thermal considerations
section.
BTL amplifier efficiency
Linear amplifiers are notoriously inefficient. The primary cause of these inefficiencies is voltage drop across the
output stage transistors. There are two components of the internal voltage drop. One is the headroom or dc
voltage drop that varies inversely to output power . The second component is due to the sinewave nature of the
output. The total voltage drop can be calculated by subtracting the RMS value of the output voltage from VDD.
The internal voltage drop multiplied by the RMS value of the supply current, IDDrms, determines the internal
power dissipation of the amplifier.
An easy-to-use equation to calculate efficiency starts out as being equal to the ratio of power from the power
supply to the power delivered to the load. To accurately calculate the RMS values of power in the load and in
the amplifier, the current and voltage waveform shapes must first be understood (see Figure 50).
V(LRMS)
VOIDD
IDD(RMS)
Figure 50. Voltage and Current Waveforms for BTL Amplifiers
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APPLICATION INFORMATION
BTL amplifier efficiency (continued)
Although the voltages and currents for SE and BTL are sinusoidal in the load, currents from the supply are very
different between SE and BTL configurations. In an SE application the current waveform is a half-wave rectified
shape whereas, in BTL it is a full-wave rectified waveform. This means RMS conversion factors are different.
Keep in mind that for most of the waveform, both the push and pull transistors are not on at the same time, which
supports the fact that each amplifier in the BTL device only draws current from the supply for half the waveform.
The following equations are the basis for calculating amplifier efficiency.
IDDrms +2VP
pRL
PSUP +VDD IDDrms +VDD 2VP
pRL
Efficiency +PL
PSUP
Efficiency of a BTL Configuration +
pVP
2VDD +
pǒPLRL
2Ǔ1ń2
2VDD
(3)
where
(4)
PL+VLrms2
RL+Vp2
2RL
VLrms +VP
2
Ǹ
Table 1 employs equation 4 to calculate efficiencies for three different output power levels. The efficiency of the
amplifier is quite low for lower power levels and rises sharply as power to the load is increased resulting in a
nearly flat internal power dissipation over the normal operating range. The internal dissipation at full output
power is less than in the half power range. Calculating the efficiency for a specific system is the key to proper
power supply design.
Table 1. Efficiency Vs Output Power in 3.3-V 8-Ω BTL Systems
OUTPUT POWER
(W) EFFICIENCY
(%)
PEAK-TO-PEAK
VOLTAGE
(V)
INTERNAL
DISSIPATION
(W)
0.125 33.6 1.41 0.26
0.25 47.6 2.00 0.29
0.375 58.3 2.45†0.28
†High-peak voltage values cause the THD to increase.
A final point to remember about linear amplifiers (either SE or BTL) is how to manipulate the terms in the
efficiency equation to utmost advantage when possible. In equation 4, VDD is in the denominator. This indicates
that as VDD goes down, efficiency goes up.
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
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APPLICATION INFORMATION
application schematic
Figure 51 is a schematic diagram of a typical handheld audio application circuit, configured for a gain of
–10 V/V.
Audio
Input
Bias
Control
VDD
6
5
7
VO+
VDD
3
1
2
4
BYPASS
IN
SE/BTL
VDD/2
CI
0.47 µF
RI
10 kΩ
CS
1 µF
CB
2.2 µF
RF
50 kΩ
SHUTDOWN
VO–8
GND
From System Control
CF
5 pF
CC
330 µF
1 kΩ
100 kΩ
VDD 100 kΩ
–
+
–
+
0.1 µF
Figure 51. TPA311 Application Circuit
The following sections discuss the selection of the components used in Figure 51.
component selection
gain setting resistors, RF and RI
The gain for each audio input of the TP A31 1 is set by resistors RF and RI according to equation 5 for BTL mode.
(5)
BTL Gain +AV+*2ǒRF
RIǓ
BTL mode operation brings about the factor 2 in the gain equation due to the inverting amplifier mirroring the
voltage swing across the load. Given that the TPA311 is a MOS amplifier, the input impedance is very high,
consequently input leakage currents are not generally a concern, although noise in the circuit increases as the
value of RF increases. In addition, a certain range of RF values is required for proper start-up operation of the
amplifier. Taken together it is recommended that the effective impedance seen by the inverting node of the
amplifier be set between 5 kΩ and 20 kΩ. The effective impedance is calculated in equation 6.
(6)
Effective Impedance +RFRI
RF)RI
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
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APPLICATION INFORMATION
component selection (continued)
As an example consider an input resistance of 10 kΩ and a feedback resistor of 50 kΩ. The BTL gain of the
amplifier would be –10 V/V and the effective impedance at the inverting terminal would be 8.3 kΩ, which is well
within the recommended range.
For high performance applications, metal film resistors are recommended because they tend to have lower
noise levels than carbon resistors. For values of RF above 50 kΩ the amplifier tends to become unstable due
to a pole formed from RF and the inherent input capacitance of the MOS input structure. For this reason, a small
compensation capacitor , CF, of approximately 5 pF should be placed in parallel with RF when RF is greater than
50 kΩ. This, in effect, creates a low pass filter network with the cutoff frequency defined in equation 7.
(7)
fc(lowpass) +1
2pRFCF
–3 dB
fc
For example, if RF is 100 kΩ and CF is 5 pF then fc is 318 kHz, which is well outside the audio range.
input capacitor, CI
In the typical application an input capacitor, CI, is required to allow the amplifier to bias the input signal to the
proper dc level for optimum operation. In this case, CI and RI form a high-pass filter with the corner frequency
determined in equation 8.
(8)
fc(highpass) +1
2pRICI
–3 dB
fc
The value of CI is important to consider as it directly affects the bass (low frequency) performance of the circuit.
Consider the example where RI is 10 kΩ and the specification calls for a flat bass response down to 40 Hz.
Equation 8 is reconfigured as equation 9.
(9)
CI+1
2pRIfc
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
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APPLICATION INFORMATION
component selection (continued)
In this example, CI is 0.40 µF, so one would likely choose a value in the range of 0.47 µF to 1 µF. A further
consideration for this capacitor is the leakage path from the input source through the input network (RI, CI) and
the feedback resistor (RF) to the load. This leakage current creates a dc offset voltage at the input to the amplifier
that reduces useful headroom, especially in high gain applications. For this reason a low-leakage tantalum or
ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor
should face the amplifier input in most applications as the dc level there is held at VDD/2, which is likely higher
than the source dc level. It is important to confirm the capacitor polarity in the application.
power supply decoupling, CS
The TPA311 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to
ensure the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also prevents
oscillations for long lead lengths between the amplifier and the speaker. The optimum decoupling is achieved
by using two capacitors of different types that target different types of noise on the power supply leads. For
higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance (ESR)
ceramic capacitor , typically 0.1 µF placed as close as possible to the device VDD lead, works best. For filtering
lower-frequency noise signals, a larger aluminum electrolytic capacitor of 10 µF or greater placed near the audio
power amplifier is recommended.
midrail bypass capacitor, CB
The midrail bypass capacitor , CB, is the most critical capacitor and serves several important functions. During
start-up or recovery from shutdown mode, CB determines the rate at which the amplifier starts up. The second
function is to reduce noise produced by the power supply caused by coupling into the output drive signal. This
noise is from the midrail generation circuit internal to the amplifier, which appears as degraded PSRR and
THD + N. The capacitor is fed from a 250-kΩ source inside the amplifier. To keep the start-up pop as low as
possible, the relationship shown in equation 10 should be maintained, which insures the input capacitor is fully
charged before the bypass capacitor is fuly charged and the amplifier starts up.
(10)
10
ǒCB 250 kΩǓv1
ǒRF)RIǓCI
As an example, consider a circuit where CB is 2.2 µF, CI is 0.47 µF, RF is 50 kΩ and RI is 10 kΩ. Inserting these
values into the equation 10 we get: 18.2 ≤ 35.5 which satisfies the rule. Bypass capacitor , CB, values of 0.1 µF
to 2.2 µF ceramic or tantalum low-ESR capacitors are recommended for the best THD and noise performance.
single-ended operation
In SE mode (see Figure 51), the load is driven from the primary amplifier output (VO+, terminal 5).
In SE mode the gain is set by the RF and RI resistors and is shown in equation 11. Since the inverting amplifier
is not used to mirror the voltage swing on the load, the factor of 2, from equation 5, is not included.
(11)
SE Gain +AV+*
ǒRF
RIǓ
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
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APPLICATION INFORMATION
single-ended operation (continued)
The output coupling capacitor required in single-supply SE mode also places additional constraints on the
selection of other components in the amplifier circuit. The rules described earlier still hold with the addition of
the following relationship:
(12)
10
ǒCB 250 kΩǓv1
ǒRF)RIǓCIƠ1
RLCC
As an example, consider a circuit where CB is 0.2.2 µF, CI is 0.47 µF, CC is 330 µF, RF is 50 kΩRL is 32 Ω, and
RI is 10 kΩ. Inserting these values into the equation 12 we get:
18.2 t35.5 Ơ94.7 which satisfies the rule.
output coupling capacitor, CC
In the typical single-supply SE configuration, an output coupling capacitor (CC) is required to block the dc bias
at the output of the amplifier, thus preventing dc currents in the load. As with the input coupling capacitor, the
output coupling capacitor and impedance of the load form a high-pass filter governed by equation 13.
(13)
fc(high pass) +1
2pRLCC
–3 dB
fc
The main disadvantage, from a performance standpoint, is that the typically small load impedances drive the
low-frequency corner higher degrading the bass response. Large values of CC are required to pass low
frequencies into the load. Consider the example where a CC of 330 µF is chosen and loads vary from 8 Ω,
32 Ω, to 47 kΩ. Table 2 summarizes the frequency response characteristics of each configuration.
Table 2. Common Load Impedances vs Low Frequency Output Characteristics in SE Mode
RLCCLOWEST FREQUENCY
8 Ω330 µF60 Hz
32 Ω330 µFĄ15 Hz
47,000 Ω330 µF0.01 Hz
As T able 2 indicates an 8-Ω load is adequate, earphone response is good, and drive into line level inputs (a home
stereo for example) is exceptional.
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
27
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
SE/BTL operation
The ability of the TPA311 to easily switch between BTL and SE modes is one of its most important cost saving
features. This feature eliminates the requirement for an additional earphone amplifier in applications where
internal speakers are driven in BTL mode but external earphone or speaker must be accommodated. Internal
to the TPA311, two separate amplifiers drive VO+ and VO–. The SE/BTL input (terminal 3) controls the operation
of the follower amplifier that drives VO– (terminal 8). When SE/BTL is held low, the amplifier is on and the TPA311
is in the BTL mode. When SE/BTL is held high, the VO– amplifier is in a high output impedance state, which
configures the TPA311 as an SE driver from VO+ (terminal 5). IDD is reduced by approximately one-half in SE
mode. Control of the SE/BTL input can be from a logic-level TTL source or, more typically , from a resistor divider
network as shown in Figure 52.
Bias
Control
5
7
VO+
3
1
2
4
BYPASS
IN
SE/BTL
SHUTDOWN
VO–8
GND
CC
330 µF
1 kΩ
100 kΩ
VDD 100 kΩ
–
+
–
+
0.1 µF
Figure 52. TPA311 Resistor Divider Network Circuit
Using a readily available 1/8-in. (3,5 mm) mono earphone jack, the control switch is closed when no plug is
inserted. When closed the 100-kΩ/1-kΩ divider pulls the SE/BTL input low. When a plug is inserted, the 1-kΩ
resistor is disconnected and the SE/BTL input is pulled high. When the input goes high, the VO– amplifier is
shutdown causing the BTL speaker to mute (virtually open-circuits the speaker). The VO+ amplifier then drives
through the output capacitor (CC) into the earphone jack.
using low-ESR capacitors
Low-ESR capacitors are recommended throughout this application. A real (as opposed to ideal) capacitor can
be modeled simply as a resistor in series with an ideal capacitor. The voltage drop across this resistor minimizes
the beneficial effects of the capacitor in the circuit. The lower the equivalent value of this resistance the more
the real capacitor behaves like an ideal capacitor.
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
28 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
5-V versus 3.3-V operation
The TPA311 operates over a supply range of 2.5 V to 5.5 V. This data sheet provides full specifications for 5-V
and 3.3-V operation, as these are considered to be the two most common standard voltages. There are no
special considerations for 3.3-V versus 5-V operation with respect to supply bypassing, gain setting, or stability .
The most important consideration is that of output power. Each amplifier in TPA311 can produce a maximum
voltage swing of VDD – 1 V. This means, for 3.3-V operation, clipping starts to occur when VO(PP) = 2.3 V as
opposed to VO(PP) = 4 V at 5 V. The reduced voltage swing subsequently reduces maximum output power into
an 8-Ω load before distortion becomes significant.
Operation from 3.3-V supplies, as can be shown from the efficiency formula in equation 4, consumes
approximately two-thirds the supply power for a given output-power level of operation from 5-V supplies.
headroom and thermal considerations
Linear power amplifiers dissipate a significant amount of heat in the package under normal operating conditions.
A typical music CD requires 12 dB to 15 dB of dynamic headroom to pass the loudest portions without distortion
as compared with the average power output. From the TP A311 data sheet, one can see that when the TPA311
is operating from a 5-V supply into a 8-Ω speaker that 350 mW peaks are available. Converting watts to dB:
PdB +10Log ǒPW
PrefǓ
+10Log ǒ350 mW
1W Ǔ
+–4.6 dB
Subtracting the headroom restriction to obtain the average listening level without distortion yields:
–4.6 dB *15 dB +*19.6 dB (15 dB headroom)
–4.6 dB *12 dB +*16.6 dB (12 dB headroom)
–4.6 dB *9dB +*13.6 dB (9 dB headroom)
–4.6 dB *6dB +*10.6 dB (6 dB headroom)
–4.6 dB *3dB +*7.6 dB (3 dB headroom)
Converting dB back into watts:
PW+10PdBń10 Pref
+11 mW (15 dB headroom)
+22 mW (12 dB headroom)
+44 mW (9 dB headroom)
+88 mW (6 dB headroom)
+175 mW (3 dB headroom)
TPA311
350-mW MONO AUDIO POWER AMPLIFIER
SLOS207C – JANUARY 1998 – REVISED MAY 2003
29
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
headroom and thermal considerations (continued)
This is valuable information to consider when attempting to estimate the heat dissipation requirements for the
amplifier system. Comparing the absolute worst case, which is 350 mW of continuous power output with 0 dB
of headroom, against 12 dB and 15 dB applications drastically affects maximum ambient temperature ratings
for the system. Using the power dissipation curves for a 5-V, 8-Ω system, the internal dissipation in the TP A311
and maximum ambient temperatures is shown in Table 3.
Table 3. TPA311 Power Rating, 5-V, 8-Ω, BTL
PEAK OUTPUT POWER
(mW)
AVERAGE OUTPUT
POWER
POWER
DISSIPATION MAXIMUM AMBIENT
TEMPERATURE
(mW) POWER
DISSIPATION
(mW) 0 CFM SOIC 0 CFM DGN
350 350 mW 600 46°C114°C
350 175 mW (3 dB) 500 64°C 120°C
350 88 mW (6 dB) 380 85°C 125°C
350 44 mW (9 dB) 300 98°C 125°C
350 22 mW (12 dB) 200 115°C 125°C
350 11 mW (15 dB) 180 119°C 125°C
Table 3 shows that the TPA311 can be used to its full 350-mW rating without any heat sinking in still air up to
46°C.
PACKAGE OPTION ADDENDUM
www.ti.com 23-Apr-2011
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
TPA311D ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Add to cart
TPA311DG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Add to cart
TPA311DGN ACTIVE MSOP-
PowerPAD DGN 8 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Add to cart
TPA311DGNG4 ACTIVE MSOP-
PowerPAD DGN 8 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Add to cart
TPA311DGNR ACTIVE MSOP-
PowerPAD DGN 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Add to cart
TPA311DGNRG4 ACTIVE MSOP-
PowerPAD DGN 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Add to cart
TPA311DR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Add to cart
TPA311DRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Add to cart
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
PACKAGE OPTION ADDENDUM
www.ti.com 23-Apr-2011
Addendum-Page 2
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TPA311DGNR MSOP-
Power
PAD
DGN 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
TPA311DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPA311DGNR MSOP-PowerPAD DGN 8 2500 358.0 335.0 35.0
TPA311DR SOIC D 8 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
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