2N5415
2N5416
SILICON
PNP TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5415 and 2N5416
are silicon PNP transistors designed for consumer and
industrial line-operated applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N5415 2N5416 UNITS
Collector-Base Voltage VCBO 200 350 V
Collector-Emitter Voltage VCEO 200 300 V
Emitter-Base Voltage VEBO 4.0 6.0 V
Continuous Collector Current IC 1.0 A
Continuous Base Current IB 0.5 A
Power Dissipation PD 1.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N5415 2N5416
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=175V - 50 - - μA
ICBO V
CB=280V - - - 50 μA
ICEV V
CE=200V, VEB=1.5V - 50 - - μA
ICEV V
CE=300V, VEB=1.5V - - - 50 μA
ICEO V
CE=150V - 50 - - μA
ICEO V
CE=250V - - - 50 μA
IEBO V
EB=4.0V - 20 - - μA
IEBO V
EB=6.0V - - - 20 μA
BVCEO I
C=50mA 200 - 300 - V
BVCER I
C=50mA, RBE=50Ω - - 350 - V
VCE(SAT) I
C=50mA, IB=5.0mA - 2.5 - 2.0 V
VBE(SAT) I
C=50mA, IB=5.0mA - 1.5 - 1.5 V
hFE V
CE=10V, IC=50mA 30 150 30 120
hfe V
CE=10V, IC=5.0mA, f=1.0kHz 25 - 25 -
fT V
CE=10V, IC=10mA, f=5.0MHz 15 - 15 - MHz
Cob V
CB=10V, IE=0, f=1.0MHz - 25 - 25 pF
TO-39 CASE
R2 (16-December 2013)
www.centralsemi.com
2N5415
2N5416
SILICON
PNP TRANSISTORS
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
www.centralsemi.com
R2 (16-December 2013)
2N5415
2N5416
SILICON
PNP TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
R2 (16-December 2013)
www.centralsemi.com
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
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