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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
MMBT3904M TRANSISTOR
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
Epitaxial Planar Die Construction
Complementary PNP Type A vailable (MMBT3906M)
Ultra-Small Surface Mount Package
Also Availab le in Lead Free Version
APPLICATION
General Purpose Amplifier, switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1N
C
1N
B E
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.2 A
PC Collector Dissipation 0.15 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V
Emitter-base breakdow n voltage V(BR)EBO IE=10µA,IC=0 6 V
Collector cut-off current ICEX V
CE=30V,VEB(off)=3V 0.05 µA
Emitter cut-off current IEBO V
EB=5V,IC=0 0.1 µA
hFE(1) V
CE=1V,IC=0.1mA 40
hFE(2) V
CE=1V,IC=1mA 70
hFE(3) V
CE=1V,IC=10mA 100 300
hFE(4) V
CE=1V,IC=50mA 60
DC current gain
hFE(5) V
CE=1V,IC=100mA 30
VCE(sat)1 IC=10mA,IB=1mA 0.2 V
Collector-emitter saturation voltage VCE(sat)2 IC=50mA,IB=5mA 0.3 V
VBE(sat)1 IC=10mA,IB=1mA 0.65 0.85 V
Base-emitter saturation voltage VBE(sat)2 IC=50mA,IB=5mA 0.95 V
Transition frequency fT V
CE=20V,IC=10mA,f=100MHz 300 MHz
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector output capacitance Cob V
CB=5V,IE=0,f=1MHz 4 pF
Noise figure NF VCE=5V,Ic=0.1mA, 5 dB
Delay time td 35 nS
Rise time tr VCC=3V, VBE（off）=-0.5V,
IC=10mA , IB1=1mA 35 nS
Storage time tS 200 nS
Fall time tf VCC=3V, IC=10mA
IB1= IB2= 1mA 50 nS
Typical Characteristics MMBT3904M
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.010 0.090 0.000 0.004
b 0.170 0.270 0.007 0.011
b1 0.270 0.370 0.011 0.015
b2
D 1.150 1.250 0.045 0.049
E 1.150 1.250 0.045 0.049
D2
E2
e
L
L1
L2
k
z 0.090 REF. 0.004 RE F.
0.230 REF.
0.150 REF. 0.009 RE F.
0.010 REF.
0.300 REF. 0.012 RE F.
0.280 REF. 0.011 RE F.
0.006 RE F.
Symbol D imensions In M illimeters D imensions In Inches
0.800 TYP. 0.032 TYP .
0.470 REF.
0.810 REF. 0.002 RE F.
0.032 RE F.
0.250 RE F.
