1N4148WS
www.vishay.com Vishay Semiconductors
Rev. 2.3, 06-Jul-17 1Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
MARKING (example only)
Bar = cathode marking
XY = type code
DESIGN SUPPORT TOOLS click logo to get started
FEATURES
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
Note
(1) Valid provided that electrodes are kept at ambient temperature.
Note
(1) Valid provided that electrodes are kept at ambient temperature
X
Y
22610
Available
Models
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
1N4148WS 1N4148WS-E3-08 or 1N4148WS-E3-18 Single A2 Tape and reel
1N4148WS-HE3-08 or 1N4148WS-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR75 V
Repetitive peak reverse voltage VRRM 100
Average rectified current half wave
rectification with resistive load (1) f ≥ 50 Hz IF(AV) 150 mA
Surge forward current t < 1 s and Tj = 25 °C IFSM 350
Power dissipation (1) Ptot 200 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 650 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg -65 to +150 °C
Operating temperature range Top -55 to +150 °C
1N4148WS
www.vishay.com Vishay Semiconductors
Rev. 2.3, 06-Jul-17 2Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Characteristics
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Relative Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 10 mA VF1V
IF = 100 mA VF1.2 V
Leakage current
VR = 20 V IR25 nA
VR = 75 V IR5
μAVR = 100 V IR100
VR = 20 V, Tj = 150 °C IR50
Diode capacitance VF = VR = 0 V CD4pF
Voltage rise when switching ON
Tested with 50 mA pulses,
tp = 0.1 μs, rise time < 30 ns,
fp = (5 to 100) kHz
Vfr 2.5 V
Reverse recovery time IF = 10 mA, iR = 1 mA, VR = 6 V,
RL = 100 Ωtrr 4ns
17437
012
VF (V)
IF (mA)
10-1
10-2
1
10
102
103
Tj = 100 °C Tj = 25 °C
17438
f = 1 kHz
Tj = 25 °C
IF (mA)
Rf (Ω)
10
102
103
104
10-2 10-1 110
2
10
2
5
2
5
2
5
2
5
0
50
100
150
200
250
0 50 100 150 200
20324
Tamb - Ambient Temperature (°C)
Ptot - Power Dissipation (mW)
17440
V
R
(V)
0.7
0.8
0.9
1.0
1.1 f = 1 MHz
Tj = 25 °C
2086410
C
D
(V
R
)
C
D
(0 V)
1N4148WS
www.vishay.com Vishay Semiconductors
Rev. 2.3, 06-Jul-17 3Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Leakage Current vs. Junction Temperature
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
17441 Tj (°C)
IR (nA)
10
102
103
104
100 200
2
5
2
5
2
5
2
5
VR = 20 V
1
0
17442 tP (s)
IFRM (A)
100
1
3
5
10-5 10-4 10-3 1010-1
10-2 25 2 525 25 25 25
2
4
10
3
5
2
4
1
3
5
2
4
0.1
I
IFRM
T
n = tP/T T = 1/fP
t
tP
n = 0
0.1
0.2
0.5
1N4148WS
www.vishay.com Vishay Semiconductors
Rev. 2.3, 06-Jul-17 4Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
Rev. 6 - Date: 23.Sept.2016
17443
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Footprint recommendation:
0.6 [0.024]
1.1 [0.043]
1.5 [0.059]
2.50 [0.098]
2.85 [0.112]
1.60 [0.063]
1.95 [0.077]
0° - 8°
0.25 [0.010]
0.40 [0.016]
Cathode bar
0.20 [0.008]
0.40 [0.016]
0.8 [0.031]
0.2 [0.008]
1.15 [0.045]
0.10 [0.004]
0.1 [0.004] max.
0.15 [0.006]
1.6 [0.063]
0.8 [0.031] 0.8 [0.031]
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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