GEN2 SiC Schottky Diode LSIC2SD120A05, 1200 V, 5 A, TO-220-2L LSIC2SD120A05 RoHS Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features * P ositive temperature coefficient for safe operation and ease of paralleling * 1 75 C maximum operating junction temperature * E xtremely fast, temperature-independent switching behavior * D ramatically reduced switching losses compared to Si bipolar diodes * Excellent surge capability Circuit Diagram TO-220-2L Applications Case Case * B oost diodes in PFC or DC/DC stages * S witch-mode power supplies 1 * Solar inverters * Industrial motor drives * EV charging stations * U ninterruptible power supplies 2 Environmental 1 2 * L ittelfuse "RoHS" logo = RoHS conform RoHS * L ittelfuse "HF" logo = Halogen Free * L ittelfuse "PB-free" logo = Pb PB--free lead plating Maximum Ratings Characteristics Repetitive Peak Reverse Voltage Symbol Conditions Value Unit VRRM - 1200 V DC Blocking Voltage VR Tj = 25 C 1200 V TC = 25 C 17.5 Continuous Forward Current IF TC = 135 C 8.5 TC = 158 C 5 Non-Repetitive Forward Surge Current IFSM TC = 25 C, TP = 10 ms, Half sine pulse 40 A A TC = 25 C 100 TC = 110 C 43.3 TJ - -55 to 175 C Storage Temperature TSTG - -55 to 150 C Soldering Temperature (reflow MSL 1) Tsold - 260 C Power Dissipation PTot Operating Junction Temperature (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17 W Pb GEN2 SiC Schottky Diode LSIC2SD120A05, 1200 V, 5 A, TO-220-2L Electrical Characteristics Characteristics Symbol Forward Voltage VF Reverse Current IR Total Capacitance Value Conditions C Min. Max. 1.8 IF = 5 A, TJ = 25 C - 1.5 IF = 5 A, TJ = 175 C - 2.1 VR = 1200 V , TJ = 25 C - <1 VR = 1200 V , TJ = 175 C - 5 VR = 1 V, f =1 MHz - 310 VR = 400 V, f = 1 MHz - 29 VR = 800 V, f = 1 MHz - 21 - 30 VR Total Capacitive Charge Typ. QC VR = 800 V, C(V)dV Qc = Unit V 100 A pF nC 0 Footnote: TJ = +25 C unless otherwise specified Thermal Characteristics Characteristics Thermal Resistance Symbol Conditions RJC - Figure 1: Typical Foward Characteristics Value Min. Typ. - 1.50 Max. Unit C/W Figure 2: Typical Reverse Characteristics 10 7 Reverse Current, I R (A) 8 Forward Current (A) 1E- 4 TJ = -55 C TJ = 25 C TJ = 125 C TJ = 150 C TJ = 175 C 9 6 5 4 3 1E - 5 1E - 6 TJ = 175 C TJ = 150 C 1E - 7 TJ = 125 C 2 TJ = 25 C 1 1E - 8 0 0 0.5 1 1.5 2 2.5 Forward Voltage (V) 3 3.5 4 4.5 0 200 400 600 800 1000 1200 Reverse Voltage, V R (V) (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17 GEN2 SiC Schottky Diode LSIC2SD120A05, 1200 V, 5 A, TO-220-2L Figure 3: Power Derating Figure 4: Current Derating 60 100.00 50 80.00 40 Forward Current (A) 120.00 Power (W) 60.00 40.00 30 20 10 20.00 0.00 10 % Duty 30 % Duty 50 % Duty 70 % Duty DC 0 25 50 75 100 125 150 25 175 50 Case Temperature (C ) 100 125 150 175 Case Temperature (C ) Figure 5: Capacitance vs. Reverse Voltage Figure 6: Capacitive Charge vs. Reverse Voltage 40 350 35 300 30 250 Capacive Charge (nC) Capacitance (pF) 75 200 150 100 50 25 20 15 10 5 0 0 1 10 Voltage (V) (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17 100 1000 0 200 400 Voltage (V) 600 800 1000 GEN2 SiC Schottky Diode LSIC2SD120A05, 1200 V, 5 A, TO-220-2L Figure 7: Stored Energy vs. Reverse Voltage Figure 8: Transient Thermal Impedance 12 1.00E+00 8 6 4 2 0 0 200 400 600 Voltage (V) Part Numbering and Marking System SIC2SD120A05 LF YYWWE ZZZZZZ-ZZ SIC = SiC Diode 2 = Gen2 SD = Schottky Diode 120 = Voltage Rating (1200 V) A = TO-220-2L 05 = Current Rating (5 A) YY = Year WW = Week E = Special Code ZZZZZZ-ZZ = Lot Number 800 1000 Normalized Transient Thermal Impedance Stored Energy (uJ) 10 0.5 0.3 0.1 0.05 0.02 1.00E-01 0.01 Single 1.00E-02 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Pulse Width (s) Packing Options Part Number Marking Packing Mode M.O.Q LSIC2SD120A05 SIC2SD120A05 Tube 1000 (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17 GEN2 SiC Schottky Diode LSIC2SD120A05, 1200 V, 5 A, TO-220-2L 1.00 mm CHARACTER HEIGHT COUNTRY OF ORIGIN ~4.5 1.550xDp0.1 EJECTOR PIN R0.5(2x) R A PHIL E E2/2 DETAIL "A" SCALE 2:1 H1 MOLD GATE A1 51 ALL OTHER SIDES ARE SHINY FINISH "A" 51 D L1 D1 D TOP & SIDE MATTE FINISH C L C A2 e PLATING PLATING BASE METAL c c c1 BASE METAL b1 b b3 b2 SECTION C-C SECTION D-D E1 Recommended Solder Pad Layout Q P c1 e1 2x .62 R0 D2 1.93 5.08 UNIT: mm NOTES: 1. DIMENSIONS D & E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.127 MM PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF PLASTIC BODY. 2. DIMENSIONS E2 & H1 DEFINE A ZONE WHERE STAMPING AND SINGULATION IRREGULARITIES RE ALLOWED. (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17 MOLD FLASH (Refer to notes) Dimensions-Package TO-220-2L Symbol A A1 A2 b b1 b2 b3 c c1 D D1 D2 E E1 e1 e H1 L L1 oP Q R Millimeters Min 4.320 1.140 2.500 0.690 0.680 1.230 1.220 0.360 0.630 14.900 8.615 12.840 10.000 7.570 2.490 5.030 6.295 13.000 2.390 3.710 2.650 - Nominal 4.450 1.270 1.270 10.180 7.610 2.540 5.080 6.545 13.500 3.840 - Max 4.570 1.400 2.740 0.880 0.870 1.390 1.380 0.503 0.527 15.600 9.017 12.950 10.360 7.680 2.590 5.130 6.795 14.00 3.250 3.960 3.050 0.254 GEN2 SiC Schottky Diode LSIC2SD120A05, 1200 V, 5 A, TO-220-2L Packing Specification (Tube for TO-220-2L ) 532 0.50 8 519 0.50 9 BLUE MARKINGS, CENTERED ON TUBE LENGTH 6.50 0.2 6.50 0.20 6 MARKING SURFACE 1 31.40 0.20 4 0.127 2 3.10 0.05 4 0.127 5 5.50 3 7 0.20 3.9 2.10 16.8 7 0.20 0.75 0.10 4 7 5.9 0.1 4 0.127 DETAIL B 4 0.127 DETAIL C NOTES: 1. Material transparent extruded PVC with antistatic dipping 2. Radius : 0.5 maximum unless otherwisen specified 3. Critical areas : Labelled in Box 4. All pin plug holes are considered critical dimension 5. Marking Font Type : Times new roman, 3.12 0.127 in height 6. Material Thickness : 0.75 0.10 7. Tolerance unless otherwise specified: Decimal: 0.05 Angle: 1 8. Unit : Millimeter (mm) Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17