© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 2
1Publication Order Number:
2N3019/D
2N3019, 2N3019S, 2N3700
Low Power Transistors
NPN Silicon
Features
MILPRF19500/391 Qualified
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic Symbol Value Unit
CollectorEmitter Voltage VCEO 80 Vdc
CollectorBase Voltage VCBO 140 Vdc
EmitterBase Voltage VEBO 7.0 Vdc
Collector Current Continuous IC1.0 Adc
Total Device Dissipation @ TA = 25°C
2N3019, 2N3019S
2N3700
PT800
500
mW
Total Device Dissipation @ TC = 25°C
2N3019, 2N3019S
2N3700
PT5.0
1.0
W
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to
+200
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
2N3019, 2N3019S
2N3700
RqJA 195
325
°C/W
Thermal Resistance, Junction to Case
2N3019, 2N3019S
2N3700
RqJC 30
150
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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COLLECTOR
3
2
BASE
1
EMITTER
TO5
CASE 205AA
STYLE 1
2N3019
Device Package Shipping
ORDERING INFORMATION
JAN2N3019
JANTX2N3019 TO5 Bulk
JANTXV2N3019
JAN2N3019S
JANTX2N3019S TO39 Bulk
JANTXV2N3019S
TO39
CASE 205AB
STYLE 1
2N3019S
TO18
CASE 206AA
STYLE 1
2N3700
JAN2N3700
JANTX2N3700 TO18 Bulk
JANTXV2N3700
2N3019, 2N3019S, 2N3700
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 30 mAdc)
V(BR)CEO 80
Vdc
EmitterBase Cutoff Current
(VEB = 5.0 Vdc)
(VEB = 7.0 Vdc)
IEBO
10
10
nAdc
mAdc
CollectorEmitter Cutoff Current
(VCE = 90 Vdc)
ICEO 10 nAdc
CollectorBase Cutoff Current
(VCB = 140 Vdc)
ICBO 10 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
hFE 50
90
100
50
15
300
300
300
CollectorEmitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.2
0.5
Vdc
BaseEmitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
VBE(sat) 1.1
Vdc
SMALLSIGNAL CHARACTERISTICS
Magnitude of SmallSignal Current Gain
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
|hfe|
5.0 20
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 5 Vdc, f = 1 kHz)
hfe 80 400
Output Capacitance
(VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz)
Cobo 12
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz)
Cibo 60
pF
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, Rg = 1 kW, PBW = 200 Hz)
NF
4.0
dB
CollectorBase Time Constant
(VCB = 10 Vdc, IC = 10 mAdc, f = 79.8 MHz)
r’b,CC400
ps
SWITCHING CHARACTERISTICS
Pulse Response
(Reference Figure in MILPRF19500/391)
ton + toff 30
ns
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
2N3019, 2N3019S, 2N3700
http://onsemi.com
3
PACKAGE DIMENSIONS
TO5 3Lead
CASE 205AA
ISSUE B
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
RF
B
C
K
L
P
D
3X
M
H
J
S
B0.007 (0.18MM) C M
A
N
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.350 0.3708.89 9.40
B0.315 0.3358.00 8.51
C0.240 0.2606.10 6.60
D0.016 0.0210.41 0.53
E0.009 0.1250.23 3.18
F0.016 0.0190.41 0.48
N0.200 BSC5.08 BSC
H0.028 0.0340.71 0.86
J0.029 0.0400.73 1.02
K1.500 1.75038.10 44.45
L0.250 ---6.35 ---
M45 BSC45 BSC
R0.054 BSC1.37 BSC
P--- 0.050--- 1.27
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
T--- 0.030--- 0.76
U0.100 ---2.54 ---
A
B
A
DETAIL X
U
NOTE 5
NOTES 4 & 6
C
U
E
2
31
DETAIL X
NOTE 7
T
LEAD IDENTIFICATION
DETAIL
TO39 3Lead
CASE 205AB
ISSUE A
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
RF
B
C
K
L
P
D
3X
M
H
J
S
B0.007 (0.18MM) C M
A
N
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.350 0.3708.89 9.40
B0.315 0.3358.00 8.51
C0.240 0.2606.10 6.60
D0.016 0.0190.41 0.48
E0.009 0.1250.23 3.18
F0.016 0.0190.41 0.48
N0.200 BSC5.08 BSC
H0.028 0.0340.71 0.86
J0.029 0.0400.73 1.02
K0.500 0.58012.70 14.73
L0.250 ---6.35 ---
M45 BSC45 BSC
R0.054 BSC1.37 BSC
P--- 0.050--- 1.27
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
T--- 0.030--- 0.76
U0.100 ---2.54 ---
A
B
A
DETAIL X
U
NOTE 5
NOTES 4 & 6
C
U
E
2
31
DETAIL X
NOTE 7
T
LEAD IDENTIFICATION
DETAIL
2N3019, 2N3019S, 2N3700
http://onsemi.com
4
PACKAGE DIMENSIONS
TO18 3Lead
CASE 206AA
ISSUE A
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
RF
B
C
K
L
P
D
3X
M
H
J
S
B0.007 (0.18MM) C M
A
N
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.209 0.2305.31 5.84
B0.178 0.1954.52 4.95
C0.170 0.2104.32 5.33
D0.016 0.0210.41 0.53
E--- 0.030--- 0.76
F0.016 0.0190.41 0.48
N0.100 BSC2.54 BSC
H0.036 0.0460.91 1.17
J0.028 0.0480.71 1.22
K0.500 0.75012.70 19.05
L0.250 ---6.35 ---
M45 BSC45 BSC
R0.054 BSC1.37 BSC
P--- 0.050--- 1.27
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
T--- 0.030--- 0.76
U0.100 ---2.54 ---
A
B
A
DETAIL X
U
NOTE 5
NOTES 4 & 6
C
U
E
2
31
DETAIL X
NOTE 7
T
LEAD IDENTIFICATION
DETAIL
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Phone: 81358171050
2N3019/D
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Click to View Pricing, Inventory, Delivery & Lifecycle Information:
ON Semiconductor:
JAN2N3700 JANTX2N3019S JANTXV2N3700 JANTX2N3700 JANTXV2N3019S JAN2N3019S JANTXV2N3019