Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
1 7
35
BOTTOM VIEW
2 6
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS LS3954A LS3954 LS3955 LS3956 LS3958 UNITS CONDITIONS
|∆VGS1-2 /∆T| max. Drift vs. Temperature 5 10 25 50 100 µV/°CV
DG= 20V, ID= 200µA
TA= -55°C to +125°C
|VGS1-2| max. Offset Voltage 5 5 10 15 25 mV VDG= 20V, ID= 200µA
G1 S2
G2
S1
D2
D1 D2
S1 G2
G1
D1
S2
31 X 32 MILS
FEATURES
LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max.
LOW LEAKAGE IG = 20pA TYP.
LOW NOISE en= 10nV/√Hz TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature -65° to +200°C
Operating Junction Temperature +150°C
Maximum Voltage and Current for Each Transistor NOTE 1
-VGSS Gate to Drain or Source Voltage 60V
-VDSO Drain to Source Voltage 60V
-IG(f) Gate Forward Current 50mA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total 400mW @ 25°C
LOW NOISE LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS
BVGSS Breakdown Voltage 60 -- -- V VDS= 0 ID= 1µA
BVGGO Gate-to-Gate Breakdown 60 -- -- V IG= 1nA ID= 0 IS= 0
TRANSCONDUCTANCE
Yfss Full Conduction 1000 2000 3000 µmho VDG= 20V VGS= 0 f= 1kHz
Yfs Typical Operation 500 700 1000 µmho VDG= 20V ID= 200µA
|Yfs1-2/Yfs| Mismatch -- 0.6 3 %
DRAIN CURRENT
IDSS Full Conduction 0.5 2 5 mA VDG= 20V VGS= 0
|IDSS1-2/IDSS| Mismatch at Full Conduction -- 1 5 %
GATE VOLTAGE
VGS(off) or VPPinchoff Voltage 1 2 4.5 V VDS= 20V ID= 1nA
VGS Operating Range 0.5 -- 4 V VDS= 20V ID= 200µA
GATE CURRENT
-IGOperating -- 20 50 pA VDG= 20V ID= 200µA
-IGHigh Temperature -- -- 50 nA VDG= 20V ID= 200µAT
A
=+125°C
-IGReduced VDG -- 5 -- pA VDG= 10V ID= 200µA
-IGSS At Full Conduction -- -- 100 pA VDG= 20V VDS= 0
LS3954A LS3954 LS3955
LS3956 LS3958
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS
OUTPUT CONDUCTANCE
YOSS Full Conduction -- -- 5 µmho VDG= 20V VGS= 0
YOS Operating -- 0.1 1 µmho VDG= 20V ID= 200µA
|YOS1-2| Differential -- 0.01 0.1 µmho
COMMON MODE REJECTION
CMR -20 log |∆VGS1-2/∆VDS| -- 100 -- dB ∆VDS= 10 to 20V ID= 200µA
CMR -20 log |∆VGS1-2/∆VDS| --75--dB∆V
DS= 5 to 10V ID= 200µA
NOISE
NF Figure -- -- 0.5 dB VDS= 20V VGS= 0 RG= 10MΩ
f= 100Hz NBW= 6Hz
enVoltage -- -- 15 nV/√Hz VDS= 20V ID= 200µA f= 10Hz
NBW= 1Hz
CAPACITANCE
CISS Input -- -- 6 pF VDS= 20V VGS= 0 f= 1MHz
CRSS Reverse Transfer -- -- 2 pF
CDD Drain-to-Drain -- 0.1 -- pF VDG= 20V ID= 200µA
TO-71
Six Lead0.230
0.209 DIA.
DIA.
0.195
0.175 0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016 DIA.
6 LEADS
3
2
18
4
5
6
0.046
0.036
45°
0.048
0.028
0.100 0.050
7
TO-78
0.335
0.370
0.305
0.335
0.016
0.019
0.165
0.185
0.040
MAX.
DIM. A
0.016
0.021
DIM. B
MIN. 0.500
0.200 0.100
0.100
0.028
0.034
45°
12345
6
7
8
0.029
0.045
SEATING
PLANE
S1 1
2
3
45
6
7
8
D1
SS
G1 S2
G2
SS
D2
P-DIP
S1 1
2
3
45
6
7
8
D1
SS
G1 S2
G2
SS
D2
0.150
0.158
(3.81)
(4.01)
0.188
0.197
0.228
0.244
(5.79)
(6.20)
SOIC
0.320
0.290
(8.13)
(7.37)
0.405
MAX.
(10.29)
(4.78)
(5.00)
