BUZ32H - Infineon Technologies

Rev. 2.4 Page 1 2009-11-10

SIPMOS

® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1 Pin 2 Pin 3

GDS

Type

V

DS

I

D

R

DS(on)Package Pb-free

BUZ 32 H 200 V 9.5 A 0.4

Ω

PG-TO-220-3 Yes

Maximum Ratings

Parameter Symbol Values Unit

Continuous drain current

T

C = 29 ˚C

I

D 9.5

A

Pulsed drain current

T

C = 25 ˚C

I

Dpuls 38

Avalanche current,limited by

T

jmax

I

AR 9.5

Avalanche energy,periodic limited by

T

jmax

E

AR 6.5 mJ

Avalanche energy, single pulse

I

D = 9.5 A,

V

DD = 50 V,

R

GS = 25

Ω

L

= 2 mH,

T

j = 25 ˚C

E

AS

120

Gate source voltage

V

GS

±

20 V

Power dissipation

T

C = 25 ˚C

P

tot 75

W

Operating temperature

T

j -55 ... + 150 ˚C

Storage temperature

T

stg -55 ... + 150

Thermal resistance, chip case

R

thJC

≤

1.67 K/W

Thermal resistance, chip to ambient

R

thJA 75

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56

BUZ 32 H

Rev. 2.4 Page 2 2009-11-10

Electrical Characteristics, at

T

j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS = 0 V,

I

D = 0.25 mA,

T

j = 25 ˚C

V

(BR)DSS 200 --

V

Gate threshold voltage

V

GS=

V

DS,

I

D = 1 mA

V

GS(th) 2.1 3 4

Zero gate voltage drain current

V

DS = 200 V,

V

GS = 0 V,

T

j = 25 ˚C

V

DS = 200 V,

V

GS = 0 V,

T

j = 125 ˚C

I

DSS

-

10

0.1

100

1

µA

Gate-source leakage current

V

GS = 20 V,

V

DS = 0 V

I

GSS - 10 100

nA

Drain-Source on-resistance

V

GS = 10 V,

I

D = 6 A

R

DS(on) - 0.3 0.4

Ω

BUZ 32 H

Rev. 2.4 Page 3 2009-11-10

Electrical Characteristics, at

T

j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS

≥

2 *

I

D *

R

DS(on)max,

I

D = 6 A

g

fs 3 4.6 -

S

Input capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

iss - 400 530

pF

Output capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

oss - 85 130

Reverse transfer capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

rss - 45 70

Turn-on delay time

V

DD = 30 V,

V

GS = 10 V,

I

D = 3 A

R

GS = 50

Ω

t

d(on)

- 10 15

ns

Rise time

V

DD = 30 V,

V

GS = 10 V,

I

D = 3 A

R

GS = 50

Ω

t

r

- 40 60

Turn-off delay time

V

DD = 30 V,

V

GS = 10 V,

I

D = 3 A

R

GS = 50

Ω

t

d(off)

- 55 75

Fall time

V

DD = 30 V,

V

GS = 10 V,

I

D = 3 A

R

GS = 50

Ω

t

f

- 30 40

BUZ 32 H

Rev. 2.4 Page 4 2009-11-10

Electrical Characteristics, at

T

j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

C = 25 ˚C

I

S-- 9.5

A

Inverse diode direct current,pulsed

T

C = 25 ˚C

I

SM -- 38

Inverse diode forward voltage

V

GS = 0 V,

I

F = 19 A

V

SD - 1.4 1.7

V

Reverse recovery time

V

R = 100 V,

I

F=

l

S, d

i

F/d

t

= 100 A/µs

t

rr - 200 -

ns

Reverse recovery charge

V

R = 100 V,

I

F=

l

S, d

i

F/d

t

= 100 A/µs

Q

rr - 0.6 -

µC

BUZ 32 H

Rev. 2.4 Page 5 2009-11-10

Drain current

I

D =

ƒ

(

T

C)

parameter:

V

GS

≥

10 V

020 40 60 80 100 120 ˚C 160

T

C

0

1

2

3

4

5

6

7

8

A

10

I

D

Power dissipation

P

tot =

ƒ

(

T

C)

020 40 60 80 100 120 ˚C 160

T

C

0

10

20

30

40

50

60

W

80

P

tot

Safe operating area

I

D =

ƒ

(

V

DS)

parameter:

D

= 0.01

, T

C = 25˚C

-1

10

0

10

1

10

2

10

A

I

D

10 0 10 1 10 2 V

V

DS

R

DS(on)

=

V

DS

/

I

D

DC

10 ms

1 ms

100 µs

10 µs

t

p = 7.6µs

Transient thermal impedance

Z

th JC =

ƒ

(

t

p)

parameter:

D = t

p /

T

-3

10

-2

10

-1

10

0

10

1

10

K/W

Z

thJC

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0

s

t

p

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50

BUZ 32 H

Rev. 2.4 Page 6 2009-11-10

Typ. output characteristics

I

D =

ƒ(

V

DS)

parameter:

t

p = 80 µs

0246810 12 V16

V

DS

0

2

4

6

8

10

12

14

16

18

A

22

I

D

V

GS [V]

a

a 4.0

b

b 4.5

c

c 5.0

d

d 5.5

e

e 6.0

ff 6.5

g

g 7.0

h

h 7.5

i

i 8.0

j

j 9.0

k

k 10.0

l

P

tot = 75W

l 20.0

Typ. drain-source on-resistance

R

DS (on) =

ƒ(

I

D)

parameter:

V

GS

04812 16 A22

I

D

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

Ω

1.3

R

DS (on)

V

GS [V] =

a

4.0

V

GS [V] =

a

4.5

b

5.0

c

5.5

d

6.0

e

6.5

f

7.0

g

7.5

h

8.0

i

9.0

j

10.0

k

20.0

Typ. transfer characteristics

I

D

=

f

(

V

GS

)

parameter:

t

p = 80 µs

V

DS

≥

2 x

I

D x

R

DS(on)max

012345678V10

V

GS

0

1

2

3

4

5

6

7

8

9

10

11

A

13

I

D

Typ. forward transconductance

g

fs

=

f

(

I

D)

parameter:

t

p = 80 µs,

V

DS

≥

2 x

I

D

x R

DS(on)max

02468A12

I

D

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

S

6.0

g

fs

BUZ 32 H

Rev. 2.4 Page 7 2009-11-10

Gate threshold voltage

V

GS (th) =

ƒ

(

T

j)

parameter:

V

GS =

V

DS,

I

D = 1 mA

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

V

4.6

V

GS(th)

-60 -20 20 60 100 ˚C 160

T

j

2%

typ

98%

Drain-source on-resistance

R

DS (on) =

ƒ

(

T

j)

parameter:

I

D = 6 A,

V

GS = 10 V

-60 -20 20 60 100 ˚C 160

T

j

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

Ω

1.3

R

DS (on)

typ

98%

Typ. capacitances

C

=

f

(

V

DS)

parameter:

V

GS = 0V,

f

= 1MHz

0510 15 20 25 30 V40

V

DS

-2

10

-1

10

0

10

1

10

nF

C

rss

C

oss

C

iss

Forward characteristics of reverse diode

I

F =

ƒ

(

V

SD)

parameter:

T

j

, t

p = 80 µs

-1

10

0

10

1

10

2

10

A

I

F

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0

V

SD

T

j = 25 ˚C typ

T

j = 25 ˚C (98%)

T

j = 150 ˚C typ

T

j = 150 ˚C (98%)

BUZ 32 H

Rev. 2.4 Page 8 2009-11-10

Avalanche energy

E

AS =

ƒ

(

T

j)

parameter:

I

D = 9.5 A,

V

DD = 50 V

R

GS = 25

Ω

,

L

= 2 mH

20 40 60 80 100 120 ˚C 160

T

j

0

10

20

30

40

50

60

70

80

90

100

110

mJ

130

E

AS

Typ. gate charge

V

GS =

ƒ

(

Q

Gate)

parameter:

I

D puls = 14 A

04812 16 20 24 28 32 nC 38

Q

Gate

0

2

4

6

8

10

12

V

16

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V

(BR)DSS =

ƒ

(

T

j)

-60 -20 20 60 100 ˚C 160

T

j

180

185

190

195

200

205

210

215

220

225

230

V

240

V

(BR)DSS

Published by

Infineon Technologies AG

81726 Munich, Germany

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conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

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For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

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on the types in question, please contact the nearest Infineon Technologies Office.

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the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

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or other persons may be endangered.