MPX2010GP - FREESCALE SEMICONDUCTOR

MPX2010

Rev 13, 10/2008

Freescale Semiconductor

Pressure

+10 kPa On-Chip Temperature

Compensated and Calibrated

Silicon Pressure Sensors

The MPX2010 series silicon piezoresistive pressure sensor s provide a very

accurate and linear voltage output directly proportional to the applied pressure.

These sensors hou se a sin gl e mo nol ith ic sil icon d ie wit h the strai n ga uge a nd

thin film resistor network integrated. The sensor is laser trimmed for precise

span, offset calibration and temperature compensation.

Features

• Temperature Compensated over 0°C to +85°C

• Ratiometric to Supply Voltage

• Differential and Gauge Options

• Available in Easy-to-Use Tape & Reel

ORDERING INFORMATION

Device Name Package

Options Case

No. # of Ports Pressure Type Device Marking

None Single Dual Gauge Differential Absolute

Small Outline Package (MPXV2010 Series)

MPXV2010GP Tray 1369 • • MPXV2010GP

MPXV2010DP Tray 1351 • • MPXV2010DP

Unibody Package (MPX2010 Series)

MPX2010D Tray 344 • • MPX2010D

MPX2010DP Tray 344C • • MPX2010DP

MPX2010GP Tray 344B • • MPX2010GP

MPX2010GS Tray 344E • • MPX2010D

MPX2010GSX Tray 344F • • MPX2010D

MPAK Package (MPXM2010 Series)

MPXM2010D Rail 1320 • • MPXM2010D

MPXM2010DT1 Tape and Reel 1320 • • MPXM2010D

MPXM2010GS Rail 1320A • • MPXM2010GS

MPXM2010GST1 Tape and Reel 1320A • • MPXM2010GS

MPX2010

Series

0 to 10 kPa (0 to 1.45 psi)

25 mV Full Scale

(Typical)

Application Examples

• Respiratory Diagnostics

• Air Movement Control

• Controllers

• Pressure Switching

UNIBODY PACKAGES

SMALL OUTLINE PACKAGES

MPXV2010GP

CASE 1369-01 MPXV2010DP

CASE 1351-01

MPX2010D

CASE 344-15 MPX2010GP

CASE 344B-01 MPX2010DP

CASE 344C-01 MPX2010GS

CASE 344E-01 MPX2010GSX

CASE 344F-01

MPXM2010D/DT1

CASE 1320-02 MPXM2010GS/GST1

CASE 1320A-02

MPAK PACKAGES

MPX2010

Sensors

2Freescale Semiconductor

Pressure

Operating Characteristics

Table 1. Operating Characteristics (VS = 10 VDC, TA = 25°C unless otherwise noted, P1 > P2)

Characteristic Symbol Min Typ Max Units

Pressure Range(1)

1. 1.0 kPa (kiloPascal) equals 0.145 psi.

POP 0 — 10 kPa

Supply Voltage(2)

2. Device is ratiometric within this specified excitation range. Operating the device at a different range may induce additional error due to device

self-heating.

VS—10 16 VDC

Supply Current IO—6.0 —mAdc

Full Scale Span(3)

3. Full Scale Span (VFSS) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the

minimum rated pressure.

VFSS 24 25 26 mV

Offset(4)

4. Offset (VOFF) is defined as the output voltage at the minimum rated pressure.

VOFF –1.0 —1.0 mV

Sensitivity ΔV/ΔΡ —2.5 —mV/kPa

Linearity —–1.0 —1.0 %VFSS

Pressure Hysteresis (0 to 10 kPa) — — ±0.1 —%VFSS

Temperature Hysteresis (–40°C to +125°C) — — ±0.5 —%VFSS

Temperature Coefficient on Full Scale Span TCVFSS –1.0 —1.0 %VFSS

Temperature Coefficient on Offset TCVOFF –1.0 —1.0 mV

Input Impedance ZIN 1300 —2550 Ω

Output Impedance ZOUT 1400 —3000 Ω

Response Time(5) (10% to 90%)

5. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a

specified step change in pressure.

tR—1.0—ms

Warm-Up Time — — 20 —ms

Offset Stability(6)

6. Offset stability is the product's output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test.

——±0.5 — %VFSS

MPX2010

Sensors

Freescale Semiconductor 3

Pressure

Maximum Ratings

Voltage Output versus Applied Differential Pressure

The output voltage of the differential or gauge sensor

increases with increasing pressure appl ied to the pressure

side (P1) relative to the vacuum side (P2). Similarly, output

voltage increases as increasing vacuum is applied to the

vacuum side (P2) relative to the pressure side (P1).

Figure 1. shows a block diagram of the internal circuitry on

the stand-alone pressure sensor chip.

Figure 1. Temperature Compensated and Calibrated

Pressure Sensor Schematic

Table 2. Maximum Ratings(1)

1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.

Rating Symbol Value Unit

Maximum Pressure (P1 > P2) PMAX 75 kPa

Burst Pressure (P1 > P2) PBURST 100 kPa

Storage Temperature TSTG –40 to +125 °C

Operating Temperature TA–40 to +125 °C

+VOUT

–VOUT

VS3

Sensing

Element

GND

Thin Film

Temperature

Compensation

and Calibration

Circuitry

MPX2010

Sensors

4Freescale Semiconductor

Pressure

On-Chip Temperature Compensation and Calibration

Figure 2. shows the output characteristics of the MPX2010

series at 25°C. The output is directly proportional to the

differential pressure and is essentially a straight line.

The effects of temperature on full scale span and offset are

very small and are shown under Operating Characteristics.

This performance over temperature is achieved by having

both the shear stress strain gauge and the th in-film resistor

circuitry on the same silicon diaphragm. Each chip is

dynamically laser trimmed for precise span and offset

calibration and temperature compensation.

Figure 3. illustrates the differential/gauge die in the basic

chip carrier (Case 344). A silicone gel isolates the die surface

and wire bonds from the environment, while allowing the

pressure signal to be transmitted to the silicon diaphragm.

The MPX2010 series pressure sensor operating

characteristics and internal reliability and qualification tests

are based on use of dry air as the pressure media. Media

other than dry air may have adverse effects on sensor

performance and long term reliability. Contact the factory for

information regarding media compatibility in your application.

LINEARITY

Linearity refers to how well a transducer's output follows

the equation: Vout = Voff + sensitivity x P over the operating

pressure range. There are two basic methods for calculating

nonlinearity: (1) end point straight line fit (see Figure 4.) or

(2) a least squares best line fit. While a least squares fit gives

the “best case” linearity error (lower numerical value), the

calculatio ns re qu i red are burdenso me .

Conversely , an end point fit will give the “worst case” error

(often more desirable in error budget calculations) and the

calculations are more straightforward for the user.

Freescale’s specified pressure sensor linearities are based

on the end point straight line me thod measured at the

midrange pressure.

Figure 2. Output vs. Pressure Differential

Figure 3. Unibody Package: Cross Sectional Diagram

(not to scale) Figure 4. Linearity Specificatio n Co mparison

Offset

(Typical)

Output (mVdc)

kPa

PSI 2.5

0.362 5

0.725 7.5

1.09 10

1.45

Span

Range

(Typical)

VS = 10 Vdc

TA = 25°C

P1 > P2

–5

TYP

aMAX

MIN

Silicone

Die Coat Die P1

Wire Bond

Lead Frame RTV Die

Bond

Epoxy

Case

Stainless Steel

Metal Cover

Least

Square

Deviation

Relative Voltage Output

Pressure (% Full Scale)

050 100

End Point Straight

Line Fit

Exaggerated

Performance

Curve

Least Squares Fit

Offset

Straight Line

Deviation

MPX2010

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Freescale Semiconductor 5

Pressure

PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE

Freescale designates the two sides of the pressure sensor

as the Pressure (P1) side and the Vacuum (P2) side. The

Pressure (P1) side is the side containing silicone gel which

isolates the die from the environment. The pressure sensor is

designed to operate with positive differential pressure

applied, P1 > P2.

The Pressure (P1) side may be identified by using the

following table.

Table 3. Pressure (P1) Side Delineation

Part Number Case

Type Pressure (P1) Side Identifier

MPX2010D 344 Stainless Steel Cap

MPX2010DP 344C Side with Part Marking

MPX2010GP 344B Side with Port Attached

MPX2010GS 344E Side with Port Attached

MPX2010GSX 344F Side with Port Attached

MPXV2010GP 1369 Side with Port Attached

MPXV2010DP 1351 Side with Part Marking

MPXM2010D/DTI 1320 Side with Part Marking

MPXM2010GS/GSTI 1320A Side with Port Attached

MPX2010

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6Freescale Semiconductor

Pressure

PACKAGE DIMENSIONS

NOTES:

DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

CONTROLLING DIMENSION: INCH.

DIMENSION -A- IS INCLUSIVE OF THE MOLD

STOP RING. MOLD STOP RING NOT TO EXCEED

16.00 (0.630).

0.136 (0.005) T

1234

PIN 1

D4 PL

SEATING

PLANE

-T-

B-A-

DAMBAR TRIM ZONE:

THIS IS INCLUDED

WITHIN DIM. "F" 8 PL

123

STYLE 1:

PIN 1. GROUND

2. + OUTPUT

3. + SUPPLY

4. - OUTPUT

STYLE 2:

PIN 1. VCC

2. - SUPPLY

3. + SUPPLY

4. GROUND

STYLE 3:

PIN 1. GND

2. -VOUT

3. VS

4. +VOUT

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.595 0.630 15.11 16.00

B0.514 0.534 13.06 13.56

C0.200 0.220 5.08 5.59

D0.016 0.020 0.41 0.51

F0.048 0.064 1.22 1.63

G0.100 BSC 2.54 BSC

J0.014 0.016 0.36 0.40

L0.695 0.725 17.65 18.42

M30˚ NOM 30˚ NOM

N0.475 0.495 12.07 12.57

R0.430 0.450 10.92 11.43

Y0.048 0.052 1.22 1.32

Z0.106 0.118 2.68 3.00

CASE 344-15

ISSUE AA

UNIBODY PACKAGE

NOTES:

DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

CONTROLLING DIMENSION: INCH.

D4 PL

PORT #1

POSITIVE

PRESSURE

(P1)

PIN 1

-A-

-Q-

-P-

0.25 (0.010) T

0.13 (0.005) QS

12 34

SEATING

PLANE

-T-

STYLE 1:

PIN 1. GROUND

2. + OUTPUT

3. + SUPPLY

4. - OUTPUT

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.145 1.175 29.08 29.85

B0.685 0.715 17.40 18.16

C0.305 0.325 7.75 8.26

D0.016 0.020 0.41 0.51

F0.048 0.064 1.22 1.63

G0.100 BSC 2.54 BSC

H0.182 0.194 4.62 4.93

J0.014 0.016 0.36 0.41

K0.695 0.725 17.65 18.42

L0.290 0.300 7.37 7.62

N0.420 0.440 10.67 11.18

P0.153 0.159 3.89 4.04

Q0.153 0.159 3.89 4.04

R0.230 0.250 5.84 6.35

U0.910 BSC 23.11 BSC

0.220 0.240 5.59 6.10

CASE 344B-01

ISSUE B

UNIBODY PACKAGE

PACKAGE DIMENSIONS

MPX2010

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Freescale Semiconductor 7

CASE 344C-01

ISSUE B

UNIBODY PACKAGE

CASE 344E-01

ISSUE B

UNIBODY PACKAGE

Pressure

NOTES:

DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

CONTROLLING DIMENSION: INCH.

PORT #2

PORT #1

PORT #2

VACUUM

(P2) (P1)

SEATING

PLANE SEATING

PLANE

D4 PL

PORT #1

POSITIVE PRESSURE

-Q-

12 43

PIN 1

-P-

-T- -T- S

0.25 (0.010) T

0.13 (0.005) Q S

-A-

STYLE 1:

PIN 1. GROUND

2. + OUTPUT

3. + SUPPLY

4. - OUTPUT

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.145 1.175 29.08 29.85

B0.685 0.715 17.40 18.16

C0.405 0.435 10.29 11.05

D0.016 0.020 0.41 0.51

F0.048 0.064 1.22 1.63

G0.100 BSC 2.54 BSC

H0.182 0.194 4.62 4.93

J0.014 0.016 0.36 0.41

K0.695 0.725 17.65 18.42

L0.290 0.300 7.37 7.62

N0.420 0.440 10.67 11.18

P0.153 0.159 3.89 4.04

Q0.153 0.159 3.89 4.04

R0.063 0.083 1.60 2.11

U0.910 BSC 23.11 BSC

V0.248 0.278 6.30 7.06

W0.310 0.330 7.87 8.38

0.220 0.240 5.59 6.10

MPX2010

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8Freescale Semiconductor

Pressure PACKAGE DIMENSIONS

CASE 344F-01

ISSUE B

UNIBODY PACKAGE

NOTES:

DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

CONTROLLING DIMENSION: INCH.

-T-

PORT #1

POSITIVE

PRESSURE

(P1)

PIN 1

4 PL

-P-

0.25 (0.010) T

0.13 (0.005) Q S

-Q-

4321

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.080 1.120 27.43 28.45

B0.740 0.760 18.80 19.30

C0.630 0.650 16.00 16.51

D0.016 0.020 0.41 0.51

E0.160 0.180 4.06 4.57

F0.048 0.064 1.22 1.63

G0.100 BSC 2.54 BSC

J0.014 0.016 0.36 0.41

N0.070 0.080 1.78 2.03

P0.150 0.160 3.81 4.06

Q0.150 0.160 3.81 4.06

R0.440 0.460 11.18 11.68

S0.695 0.725 17.65 18.42

U0.840 0.860 21.34 21.84

V0.182 0.194 4.62 4.92

0.220 0.240 5.59 6.10

STYLE 1:

PIN 1. GROUND

2. V (+) OUT

3. V SUPPLY

4. V (-) OUT

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PIN 4

PIN 1

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CASE 1320-02

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MPX2010

Rev. 13

10/2008

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