MMBTA63 - Fairchild Semiconductor Corporation

MPSA63 / MMBTA63 / PZTA63 — PNP Darlington Transistor

MPSA63 / MMBTA63 / PZTA63 Rev. A1 1

August 2010

MPSA63 / MMBTA63 / PZTA63

PNP Darlington Transistor

Features

• This device is designed for applications requiring extremely high current ga in at currents to 800 mA.

• Sourced from Process 61.

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics Ta = 25°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.

** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.

Symbol Parameter Value Units

VCES Collector-Emitter Voltage -30 V

VCBO Collector-Base V oltage -30 V

VEBO Emitter-Base Voltage -10 V

ICCollector Current - Continuous -1.2 A

TJ, Tstg Operating and Storage Junction Temperature Range - 55 to +150 °C

Symbol Parameter Max. Units

MPSA63 *MMBTA63 **PZTA63

PDTotal Device Dissip ation

Derate above 25°C625

5.0 350

2.8 1,000

8.0 mW

mW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W

MPSA63 MMBTA63 PZTA63

EBC TO-92 SOT-23 SOT-223

Mark:2U

MPSA63 / MMBTA63 / PZTA63 — PNP Darlington Transistor

MPSA63 / MMBTA63 / PZTA63 Rev. A1 2

Electrical Characteristics Ta = 25°C unless otherwise noted

* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

Typical Performance Characteristics

Symbol Parameter Test Condition Min. Max. Units

Off Characteristics

BV(BR)CES Collector-Emitter Breakdo wn Voltage IC = -100μA, IB = 0 -30 V

ICBO Collector-Cutoff Current VCB = -30V, IE = 0 -100 nA

IEBO Emitter-Cutoff Current VEB = -10V, IC = 0 -100 nA

On Characteristics *

hFE DC Current Gain IC = -10mA, VCE = -5.0V

IC = -100mA, VCE = -5.0V 5,000

10,000

VCE(sat) Collector-Emitter Saturation Voltage IC = -100mA, IB = -0.1 mA -1.5 V

VBE(on) Base-Emitter On Voltage IC = -100mA, VCE = -5.0V -2.0 V

Small Signal Characteristics

fTCurrent Gain - Bandwidth Product IC = -10mA, VCE = -5.0V,

f = 100MHz 125 MHz

Figure 1. Typical Pulsed Current Gain

vs Collector Current Figure 2. Collector-Emitter Saturation Voltage

vs Collector Current

Typical Pu lsed C u rren t Gai n

vs Col lecto r C urren t

0.01 0.1 1

I - COLLECTOR CURRENT (A)

h - T YPICAL PULSED CURRENT GAIN ( K)

125 °C

25 °C

- 40 ° C

V = 5V

C o ll ector -Emitter Satur ati o n

Vo ltag e vs C o ll ector Cu r rent

0.001 0.01 0.1 1

0.4

0.8

1.2

1.6

I - COLLECTOR CURRENT (A)

V - COLLEC TOR EMITTER VOLTA GE (V)

CESAT

= 1000

25 °C

- 40 °C

125 °C

ββ

MPSA63 / MMBTA63 / PZTA63 — PNP Darlington Transistor

MPSA63 / MMBTA63 / PZTA63 Rev. A1 3

Typical Performance Characteristics (continued)

Figure 3. Base-Emitter Saturation Voltage

vs Collector Current Figure 4. Base-Emitter On Voltage

vs Collector Current

Figure 5. Collector Cutoff Current

vs Ambient Temperature Figure 6. Input and Output Capacitance

vs Reverse Bias Voltage

Figure 7. Power Dissipation

vs Ambient Temperature

B ase-Emitter Satur ati o n

V olt a ge v s Colle c tor Current

0.001 0.01 0.1 1

0.4

0.8

1.2

1.6

I - COLLECTOR CU R REN T (A)

V - BASE EM ITTE R VOLTAGE (V)

BESAT

25 °C

- 4 0 °C

125 °C

= 1000

Base Emitter ON Voltage vs

Coll ect or Current

0.001 0.01 0.1 1

0.4

0.8

1.2

1.6

I - C OLLECTOR CU R REN T (A)

V - BAS E EMITTER ON VOLTAGE (V)

BE(ON)

V = 5V

25 °C

- 4 0 °C

125 °C

C o ll ector -C u to ff Cu r rent

vs A mb ient Temp erat u re

25 50 75 100 125

0.01

0.1

100

T - A MBI ENT TEMPERATUR E ( C)

I - COLLECTOR CU RR ENT (nA)

CBO

V = 15V

I n pu t a n d Output Cap a cita nc e

vs Reverse Bias Voltage

0.1 1 10 100

RE VER SE VO L TA GE (V)

CA PA CI TANCE ( pF)

f = 1.0 M Hz

Powe r Dis sipation vs

Ambient Temperature

0 25 50 75 100 125 150

0.25

0.5

0.75

TEMPER ATURE ( C)

P - POWER DISSIPATION (W)

SOT-223

TO-92

SOT-23

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

AccuPower¥

Auto-SPM¥

Build it Now¥

CorePLUS¥

CorePOWER¥

CROSSVOLT¥

CTL¥

Current Transfer Logic¥

DEUXPEED®

Dual Cool™

EcoSPARK®

EfficientMax¥

ESBC¥

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series¥

FACT®

FAST®

FastvCore¥

FETBench¥

FlashWriter®*

FPS¥

F-PFS¥

FRFET®

Global Power ResourceSM

Green FPS¥

Green FPS¥ e-Series¥

Gmax¥

GTO¥

IntelliMAX¥

ISOPLANAR¥

MegaBuck¥

MICROCOUPLER¥

MicroFET¥

MicroPak¥

MicroPak2¥

MillerDrive¥

MotionMax¥

Motion-SPM¥

OptoHiT™

OPTOLOGIC®

OPTOPLANAR®

PDP SPM™

Power-SPM¥

PowerTrench®

PowerXS™

Programmable Active Droop¥

QFET®

QS¥

Quiet Series¥

RapidConfigure¥

Saving our world, 1mW/W/kW at a time™

SignalWise¥

SmartMax¥

SMART START¥

SPM®

STEALTH¥

SuperFET¥

SuperSOT¥-3

SuperSOT¥-6

SuperSOT¥-8

SupreMOS®

SyncFET¥

Sync-Lock™

®*

The Power Franchise®

TinyBoost¥

TinyBuck¥

TinyCalc¥

TinyLogic®

TINYOPTO¥

TinyPower¥

TinyPWM¥

TinyWire¥

TriFault Detect¥

TRUECURRENT¥*

PSerDes¥

UHC®

Ultra FRFET¥

UniFET¥

VCX¥

VisualMax¥

XS™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHI LD SEM ICONDUCTOR RESERVES THE RIG HT TO MAKE CHANGES WITHOUT FURTHER NOTI CE TO ANY PRODUCTS HEREIN TO I MPROVE

RELIABI LITY , FUNCTION, O R DESIGN. FAI RCHILD DOES NOT ASSUME ANY L IABIL ITY ARI SING OUT OF THE APPL ICATION O R USE OF ANY PRODUCT OR

CIRCUI T DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER I TS PATENT RIGHTS, NOR THE RIG HTS OF OTHERS. THESE

SPECIFI CATIONS DO NOT EX PAND THE TERMS OF FAIRCHI LD’S WORLDWIDE TERMS AND CONDI TIONS, SPECI FICAL LY THE WARRANTY THEREIN,

WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHI LD’S PRODUCTS ARE NOT AUTHORIZED F OR USE AS CRITI CAL COM PONENTS IN LI FE SUPPORT DEVICES OR SY STEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAI RCHI LD SEM ICONDUCTOR CO RPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical im plant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its

safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, w ww.fairchildsemi.com,

under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.

Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,

and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of

counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are

listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have

full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.

Fairchild and our Authorized Distributors will stand behind all w arranties and will appropriately address any warranty issues t hat may arise. Fairch ild will not p rovide

any w arranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our

customers to do their part in stopping this practice by buy ing direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes

at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only. Rev. I49