PD4M441L P2H4M441L MOSFET 30A 450 450500V PD4M441L/440L PD4M440L P2H4M440L P2H4M441L/440L 108.0 108.0 Approximate Weight :220g Approximate Weight :220g Maximum Ratings Rating VDSS Drain-Source Voltage Gate-Source Voltage Duty=50% Continuous Drain Current D.C. Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage 1 Mounting Torque Symbol Grade PD4M441L/P2H4M441L PD4M440L/P2H4M440L Unit 450 500 V VGS=0V VGSS 20 V ID 30c=25 21c=25 A IDM 60c=25 A PD 230c=25 W Tjw -40+150 Tstg -40+125 Viso Ftor 2000 - ,AC1 Terminals to Base, AC 1 min . 3.0 Module Base to Heat sink 2.0 Bus bar to Main Terminals http://store.iiic.cc/ V Nm Electrical CharacteristicsTC25 unless otherwise noted Characteristic Symbol Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current MOSFET Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Value Min. Typ. Max. Unit VDSVDSS, VGS0V 1 Tj125, VDSVDSS, VGS0V 4 VDSVGS, ID1mA 2 3.2 4 V VGS20V, VDS0V 1 A rDS on VGS10V, ID15A 190 210 m gfg VDS15V, ID15A 27 S 5.2 nF 1.1 nF Crss 0.18 nF ton d 100 ns 60 ns 180 ns 50 ns IDSS VGS th IGSS Ciss Coss tr toff d VGS0V VDS25V f1MHz VDD1/2VDSS ID15A VGS-5V, 10V RG7 tf mA Source-Drain Diode Ratings and CharacteristicsTC25 unless otherwise noted Characteristic Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Condition Symbol IS Condition D. C. ISM VSD trr Qr IS30A IS30A -diS/dt100A/s Maximum Value Min. Typ. Max. Unit 21 A 60 A 2.0 V 750 ns 17 C Thermal Characteristics Characteristic Symbol - Thermal Resistance, Junction to Case Rthj-c - Thermal Resistance, Case to Heatsink Rthc-f Condition Maximum Value Min. Typ. Max. MOSFET 0.56 Diode 0.56 Mounting surface flat, smooth, and greased 0.1 317 http://store.iiic.cc/ Unit /W Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage TC=25i 250 s Pulse Test 10V 6V 30 20 VGS=5V 10 0 4V 10 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE VDS (V) VGS=0V f=1kHz 8 Ciss 6 Coss 4 Crss 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) RG=7 0 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 15A 0.42 10A 0.34 0.26 0.18 0.10 -40 0 40 80 120 JUNCTION TEMPERATURE Tj ( ) 160 Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance ID=20A ID=15A VDD=250V TC=25i 80 s Pulse Test 5 VDD= 100V 250V 400V 2 8 4 1 0.5 toff ton 0.2 0.1 0 40 80 120 160 200 TOTAL GATE CHRAGE Qg (nC) 0.05 240 Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics VDD=250V TC=25i 80 s Pulse Test ID=30A 0.50 16 12 0 100 Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current 1000 10A 16 GATE TO SOURCE VOLTAGE VGS (V) CAPACITANCE C (nF) 10 0 15A Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage 12 2 4 0 12 Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage ID=30A 6 2 VGS=10V 250 s Pulse Test SWITCHING TIME t ( s) DRAIN CURRENT ID (A) 40 TC=25i 250 s Pulse Test 8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 50 Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) Fig. 1 Typical Output Characteristics 2 5 10 20 50 100 SERIES GATE IMPEDANCE RG ( ) Fig. 9 Typical Reverse Recovery Characteristics 250 s Pulse Test 60 200 IS=30A IS=15A Tj=150i SOURCE CURRENT IS (A) td(off) td(on) 100 tr 50 tf 30 Tj=125i Tj=25i 20 10 20 trr 500 200 IR 100 50 10 1 2 5 10 20 DRAIN CURRENT ID (A) 50 Fig. 10 Maximum Safe Operating Area 0 0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE VSD (V) TC=25i Tj=150iMAX Single Pulse Operation in this area 100 is limited by RDS (on) 10 s 50 100 s 20 10 1ms 5 2 0.5 100 200 2 5 2 10 -1 Per Unit Base Rth(j-c)=0.56i/W 1 Shot Pulse 5 2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) DC 2 0 10 0 10ms 1 1 1.2 Fig. 11 Normalized Transient Thermal impedance(MOSFET) 200 DRAIN CURRENT ID (A) 1000 40 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] SWITCHING TIME t (ns) 50 200 0.2 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 2000 500 -441L -440L 100 200 500 1000 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) - 302 http://store.iiic.cc/ 10 0 10 1 300 400 -dis/dt (A/ s) 500 600 M O S F E T