© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C40 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ40 V
VGSM Transient ± 20 V
ID25 TC= 25°C 300 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC= 25°C, pulse width limited by TJM 900 A
IATC= 25°C 100 A
EAS TC= 25°C 600 mJ
PDTC= 25°C 480 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062in.) from case for 10s 300 °C
Tsold Plastic body for 10 seconds 260 °C
MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 40 V
VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V
IGSS VGS = ± 20V, VDS = 0V ±200 nA
IDSS VDS = VDSS 5 μA
VGS = 0V TJ = 150°C 150 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 2.5 mΩ
TrenchT2TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA300N04T2
IXTP300N04T2
VDSS = 40V
ID25 = 300A
RDS(on) ≤≤
≤≤
≤ 2.5mΩΩ
ΩΩ
Ω
DS100032(08/08)
G = Gate D = Drain
S = Source TAB = Drain
TO-263 (IXTA)
GS
(TAB)
TO-220 (IXTP)
GDS(TAB)
Preliminary Technical Information
Features
zInternational standard packages
z175°C Operating Temperature
z Avalanche rated
z High current handling capability
z Low RDS(on)
Advantages
zEasy to mount
zSpace savings
zHigh power density
Applications
•Synchronous Buck Converters
•High Current Switching Power
Supplies
•Battery Powered Electric Motors
•Resonant-mode power supplies
•Electronics Ballast Application
•Class D Audio Amplifiers
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA300N04T2
IXTP300N04T2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 55 94 S
Ciss 10.7 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1630 pF
Crss 263 pF
td(on) 22 ns
tr 17 ns
td(off) 32 ns
tf 13 ns
Qg(on) 145 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 44 nC
Qgd 36 nC
RthJC 0.31 °C/W
RthCH TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
IS VGS = 0V 300 A
ISM Repetitive, Pulse width limited by TJM 1000 A
VSD IF = 100A, VGS = 0V, Note 1 1.3 V
trr 53 ns
IRM 1.8 A
QRM 47.7 nC
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 2Ω (External)
IF = 150A, VGS = 0V
-di/dt = 100A/μs
VR = 20V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-263 (IXTA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-220 (IXTP) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2008 IXYS CORPORATION, All rights reserved
IXTA300N04T2
IXTP300N04T2
Fig. 1. Output Characteristics
@ 25º C
0
25
50
75
100
125
150
175
200
225
250
275
300
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
50
100
150
200
250
300
350
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 150ºC
0
25
50
75
100
125
150
175
200
225
250
275
300
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
7
V
5
V
6
V
Fig. 4. R
DS(on)
Normalized to I
D
= 150A Value
vs. Ju ncti o n Temp er atu r e
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 300A
I
D
= 150A
Fig. 5. R
DS(on)
Normalized to I
D
= 150A Valu e
vs. Drain Current
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
0 50 100 150 200 250 300 350
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175 200
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA300N04T2
IXTP300N04T2
Fig. 7. Input Adm i ttance
0
20
40
60
80
100
120
140
160
180
3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
40
80
120
160
200
240
280
320
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Ch ar g e
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 20V
I
D
= 150A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
1 10 100
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
10ms
100ms
R
DS(
on
)
Limit
DC
External Lead Current Limit
IXYS REF: T_300N04T2(V6)08-14-08
© 2008 IXYS CORPORATION, All rights reserved
IXTA300N04T2
IXTP300N04T2
Fi g . 14. R esi sti ve Tu r n -o n
Ri se Time vs. D r ain C u r r en t
10
15
20
25
30
35
40
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 2Ω
V
GS
= 10V
V
DS
= 20V
T
J
= 25ºC
T
J
= 125ºC
Fig. 15. Resistive T urn-on
Switc h ing Times vs. Gate R e si stan ce
0
20
40
60
80
100
120
2 4 6 8 10 12 14 16
R
G
- Ohms
t
r
- Nanoseconds
15
25
35
45
55
65
75
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 20V
I
D
= 200A, 100A
Fi g . 16. R esisti ve Tur n -off
Switching Ti mes vs. Junction T em perature
5
10
15
20
25
30
35
40
45
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
15
20
25
30
35
40
45
50
55
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2Ω, V
GS
= 10V
V
DS
= 20V
I
D
= 200A
I
D
= 100A
Fi g . 17. R esi sti v e Tu r n-o ff
Switching T imes vs. Drain Current
8
12
16
20
24
28
32
36
40
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
20
25
30
35
40
45
50
55
60
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2Ω, V
GS
= 10V
V
DS
= 20V
T
J
= 25ºC
T
J
= 125ºC
Fig. 13. Resistive T urn-on
Rise T ime vs. Junction Temperature
14
16
18
20
22
24
26
28
30
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2Ω
V
GS
= 10V
V
DS
= 20V
I
D
= 200A
I
D
= 100A
Fi g . 18. Re si sti ve Tu r n -o ff
Switc h ing Times vs. Gate Resi stance
0
25
50
75
100
125
150
175
200
225
250
2 4 6 8 10 12 14 16
R
G
- Ohms
t
f
- Nanoseconds
20
40
60
80
100
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 20V
I
D
= 100A, 200A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA300N04T2
IXTP300N04T2
Fi g. 19. Maximu m Tr an si en t Th er mal Imp ed an ce
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS REF: T_300N04T2(V6)08-14-08
