Semiconductor Group 1
NPN Silicon Transistors for High Voltages SMBTA 42
SMBTA 43
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package1)
Pin Configuration
SMBTA 42
SMBTA 43 Q68000-A6478
Q68000-A6482
s1D
s1E SOT-23
B E C
123
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm ×40 mm ×1.5 mm/6 cm2 Cu.
Parameter Symbol Values Unit
Emitter-base voltage VEB0
Collector-base voltage VCB0
Junction temperature Tj˚C
Total power dissipation, TS = 74 ˚C Ptot mW
Storage temperature range Tstg
Collector-emitter voltage VCE0 V
Thermal Resistance
Junction - ambient2) Rth JA ≤ 280 K/W
6
360
150
– 65 … + 150
300 200
SMBTA 42 SMBTA 43
Collector current ICmA500
Base current IB100
Junction - soldering point Rth JS ≤ 210
300 200
●High breakdown voltage
●Low collector-emitter saturation voltage
●Complementary types: SMBTA 92, SMBTA 93 (PNP)
5.91
Semiconductor Group 2
SMBTA 42
SMBTA 43
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain
I
C = 1 mA, VCE = 10 V
I
C = 10 mA, VCE = 10 V1)
I
C = 30 mA, VCE = 10 V1) SMBTA 42
SMBTA 43
VCollector-emitter breakdown voltage
I
C = 1 mA SMBTA 42
SMBTA 43
V(BR)CE0 300
200 –
––
–
nA
nA
µA
µA
Collector-base cutoff current
VCB = 200 V SMBTA 42
VCB = 160 V SMBTA 43
VCB = 200 V, TA = 150 ˚C SMBTA 42
VCB = 160 V, TA = 150 ˚C SMBTA 43
ICB0 –
–
–
–
–
–
–
–
100
100
20
20
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Emitter-base breakdown voltage
I
E = 100 µAV(BR)EB0 6––
V
Collector-emitter saturation voltage1)
I
C = 20 mA, IB = 2 mA SMBTA 42
SMBTA 43
VCEsat –
––
–0.5
0.4
–hFE 25
40
40
40
–
–
–
–
–
–
–
–
MHzTransition frequency
I
C = 10 mA, VCE = 20 V, f = 100 MHz fT50 – –
AC characteristics
pFOutput capacitance
VCB = 20 V, f = 1 MHz SMBTA 42
SMBTA 43
Cobo –
––
–3
4
Collector-base breakdown voltage
I
C = 100 µA SMBTA 42
SMBTA 43
V(BR)CB0 300
200 –
––
–
nAEmitter-base cutoff current
VEB = 3 V IEB0 – – 100
Base-emitter saturation voltage1)
I
C = 20 mA, IB = 2 mA VBEsat – – 0.9
1) Pulse test conditions: t≤300 µs, D = 2 %.
Semiconductor Group 3
SMBTA 42
SMBTA 43
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT=f(IC)
VCE = 10 V, f = 100 MHz
Operating range IC = f (VCE0)
TA= 25 ˚C, D = 0
Semiconductor Group 4
SMBTA 42
SMBTA 43
Collector cutoff current ICB0 =f(TA)
VCB = 160 V
DC current gain hFE =f(IC)
VCE =10V
Collector current IC = f (VBE)
VCE =10V
