NPN Silicon Transistors for High Voltages SMBTA 42 SMBTA 43 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA 92, SMBTA 93 (PNP) Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 42 SMBTA 43 s1D s1E Q68000-A6478 Q68000-A6482 B SOT-23 E C Maximum Ratings Parameter Symbol Values SMBTA 42 SMBTA 43 Unit Collector-emitter voltage VCE0 300 200 V Collector-base voltage VCB0 300 200 Emitter-base voltage VEB0 Collector current IC 500 Base current IB 100 Total power dissipation, TS = 74 C Ptot 360 mW Junction temperature Tj 150 C Storage temperature range Tstg 6 mA - 65 ... + 150 Thermal Resistance Junction - ambient2) Rth JA 280 Junction - soldering point Rth JS 210 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 42 SMBTA 43 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 300 200 - - - - 300 200 - - - - 6 - - - - - - - - - - 100 100 20 20 nA nA A A - - 100 nA 25 40 40 40 - - - - - - - - - - - - 0.5 0.4 DC characteristics Collector-emitter breakdown voltage IC = 1 mA SMBTA 42 SMBTA 43 V(BR)CE0 Collector-base breakdown voltage IC = 100 A SMBTA 42 SMBTA 43 V(BR)CB0 Emitter-base breakdown voltage IE = 100 A V(BR)EB0 Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 C VCB = 160 V, TA = 150 C ICB0 SMBTA 42 SMBTA 43 SMBTA 42 SMBTA 43 Emitter-base cutoff current VEB = 3 V IEB0 DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) hFE SMBTA 42 SMBTA 43 V - V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA SMBTA 42 SMBTA 43 VCEsat Base-emitter saturation voltage1) IC = 20 mA, IB = 2 mA VBEsat - - 0.9 Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz fT 50 - - Output capacitance VCB = 20 V, f = 1 MHz Cobo AC characteristics 1) SMBTA 42 SMBTA 43 Semiconductor Group pF - - Pulse test conditions: t 300 s, D = 2 %. 2 MHz - - 3 4 SMBTA 42 SMBTA 43 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Operating range IC = f (VCE0) TA = 25 C, D = 0 Semiconductor Group 3 SMBTA 42 SMBTA 43 Collector cutoff current ICB0 = f (TA) VCB = 160 V Collector current IC = f (VBE) VCE = 10 V DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 4